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参数资料
| 型号： | APTM100UM65SCAVG |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 145 A, 1000 V, 0.078 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP6, 5 PIN |
| 文件页数： | 8/8页 |
| 文件大小： | 266K |
| 代理商： | APTM100UM65SCAVG |
APTM100UM65SCAVG
APTM100UM65S
CAVG
–
Rev
0
Septem
ber,
2009
www.microsemi.com
8 – 8
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.04
0.08
0.12
0.16
0.2
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Th
e
rm
a
lIm
p
e
da
nc
e
(
°C
/W)
Forward Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
60
120
180
240
00.5
1
1.5
22.533.5
VF Forward Voltage (V)
I F
Forwa
rd
Current
(A)
Reverse Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
150
300
450
600
750
900
1050
1200
400
600
800 1000 1200 1400 1600
VR Reverse Voltage (V)
I R
Revers
e
Cu
rren
t(
A)
Capacitance vs.Reverse Voltage
0
1000
2000
3000
4000
5000
6000
7000
8000
1
10
100
1000
VR Reverse Voltage
C
,C
a
pa
cit
a
nce
(
p
F)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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