参数资料
型号: APTM120DA30CT1G
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 31 A, 1200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SP1, 12 PIN
文件页数: 2/5页
文件大小: 194K
代理商: APTM120DA30CT1G
APTM120DA30CT1G
APT
M
120DA30CT
1G
Rev
0
Septem
ber
,2009
www.microsemi.com
2 – 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VDS =1200V
VGS = 0V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 25A
300
360
m
Ω
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
4
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V
±100
nA
Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
14560
Coss
Output Capacitance
1340
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
172
pF
Qg
Total gate Charge
560
Qgs
Gate – Source Charge
90
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 25A
265
nC
Td(on)
Turn-on Delay Time
100
Tr
Rise Time
60
Td(off)
Turn-off Delay Time
315
Tf
Fall Time
Resistive switching @ 25°C
VGS = 15V
VBus = 800V
ID = 25A
RG = 2.2Ω
90
ns
SiC chopper diode ratings and characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
64
400
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 175°C
112
2000
A
IF
DC Forward Current
Tc = 100°C
20
A
Tj = 25°C
1.6
1.8
VF
Diode Forward Voltage
IF = 20A
Tj = 175°C
2.3
3
V
QC
Total Capacitive Charge
IF = 20A, VR = 600V
di/dt =1000A/s
80
nC
f = 1MHz, VR = 200V
192
C
Total Capacitance
f = 1MHz, VR = 400V
138
pF
Thermal and package characteristics
Symbol
Characteristic
Min
Typ
Max
Unit
Transistor
0.19
RthJC
Junction to Case Thermal Resistance
SiC Diode
1
°C/W
VISOL
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
4000
V
TJ
Operating junction temperature range
-40
150
TSTG
Storage Temperature Range
-40
125
TC
Operating Case Temperature
-40
100
°C
Torque Mounting torque
To heatsink
M4
2.5
4.7
N.m
Wt
Package Weight
80
g
相关PDF资料
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