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参数资料
| 型号： | APTM120DA30CT1G |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 31 A, 1200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | ROHS COMPLIANT, SP1, 12 PIN |
| 文件页数： | 5/5页 |
| 文件大小： | 194K |
| 代理商： | APTM120DA30CT1G |
APTM120DA30CT1G
APT
M
120DA30CT
1G
–
Rev
0
Septem
ber
,2009
www.microsemi.com
5 – 5
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.2
0.4
0.6
0.8
1
1.2
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Th
e
rm
a
lIm
p
e
da
nc
e
(
°C
/W)
Forward Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
10
20
30
40
0
0.5
11.5
22.5
33.5
VF Forward Voltage (V)
I F
Forwa
rd
Current
(A)
Reverse Characteristics
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0
50
100
150
200
400
600
800
1000 1200 1400 1600
VR Reverse Voltage (V)
I R
Revers
e
Cu
rren
t(
A)
Capacitance vs.Reverse Voltage
0
200
400
600
800
1000
1200
1400
1
10
100
1000
VR Reverse Voltage
C
,C
a
pa
cit
a
nce
(
p
F)
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM120DA30T1G | 功能描述:MOSFET N-CH 1200V 31A SP1 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM120DA56T1G | 功能描述:MOSFET N-CH 1200V 18A SP1 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM120DA68T1G | 功能描述:MOSFET N-CH 1200V 15A SP1 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
| APTM120DDA57T3 | 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual Boost chopper MOSFET Power Module |
| APTM120DDA57T3G | 功能描述:MOSFET MOD DUAL BOOST CHOP SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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