参数资料
型号: APTM120DA30CT1G
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 31 A, 1200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET
封装: ROHS COMPLIANT, SP1, 12 PIN
文件页数: 3/5页
文件大小: 194K
代理商: APTM120DA30CT1G
APTM120DA30CT1G
APT
M
120DA30CT
1G
Rev
0
Septem
ber
,2009
www.microsemi.com
3 – 5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol
Characteristic
Min
Typ
Max
Unit
R25
Resistance @ 25°C
50
k
Ω
R25/R25
5
%
B25/85
T25 = 298.15 K
3952
K
B/B
TC=100°C
4
%
=
T
B
R
T
1
exp
25
85
/
25
SP1 Package outline (dimensions in mm)
See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
Typical Mosfet Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single P ulse
0
0.04
0.08
0.12
0.16
0.2
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
T
h
er
m
a
lIm
p
e
d
a
n
ce
C
/W
)
Maxim um Effective Transient Therm al Im pedance, Junction to Case vs Pulse Duration
T: Thermistor temperature
RT: Thermistor value at T
相关PDF资料
PDF描述
APTM120DA30T1G 31 A, 1200 V, 0.36 ohm, N-CHANNEL, Si, POWER, MOSFET
APTM120DSK57T3 17 A, 1200 V, 0.57 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM120DSK57T3 17 A, 1200 V, 0.57 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
APTM120SK15 60 A, 1200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
APTM120SK15 60 A, 1200 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
相关代理商/技术参数
参数描述
APTM120DA30T1G 功能描述:MOSFET N-CH 1200V 31A SP1 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:*
APTM120DA56T1G 功能描述:MOSFET N-CH 1200V 18A SP1 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:*
APTM120DA68T1G 功能描述:MOSFET N-CH 1200V 15A SP1 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:*
APTM120DDA57T3 制造商:ADPOW 制造商全称:Advanced Power Technology 功能描述:Dual Boost chopper MOSFET Power Module
APTM120DDA57T3G 功能描述:MOSFET MOD DUAL BOOST CHOP SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:*