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参数资料
| 型号： | APTM120DDA57T3 |
| 元件分类： | JFETs |
| 英文描述： | 17 A, 1200 V, 0.57 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-25 |
| 文件页数： | 2/6页 |
| 文件大小： | 319K |
| 代理商： | APTM120DDA57T3 |
APTM120DDA57T3
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APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 250A
1200
V
VGS = 0V,VDS = 1200V
Tj = 25°C
100
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS = 1000V
Tj = 125°C
500
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 8.5A
570
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 2.5mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±100
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
5155
Coss
Output Capacitance
770
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
130
pF
Qg
Total gate Charge
187
Qgs
Gate – Source Charge
24
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 600V
ID = 17A
120
nC
Td(on)
Turn-on Delay Time
20
Tr
Rise Time
15
Td(off)
Turn-off Delay Time
160
Tf
Fall Time
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 17A
RG = 5
45
ns
Eon
Turn-on Switching Energy
990
Eoff
Turn-off Switching Energy
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 17A, RG = 5
685
J
Eon
Turn-on Switching Energy
1565
Eoff
Turn-off Switching Energy
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 17A, RG = 5
857
J
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
VRRM
Maximum Peak Repetitive Reverse Voltage
1200
V
Tj = 25°C
250
IRM
Maximum Reverse Leakage Current
VR=1200V
Tj = 125°C
500
A
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
25
A
Tj = 25°C
2.3
2.8
VF
Diode Forward Voltage
IF = 25A
VGE = 0V
Tj = 125°C
1.8
V
trr
Reverse Recovery Time
Tj = 125°C
0.13
s
Tj = 25°C
2.3
Qrr
Reverse Recovery Charge
IF = 25A
VR = 600V
di/dt =800A/s
Tj = 125°C
6
C
Eon includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
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