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参数资料
| 型号： | APTM120DDA57T3 |
| 元件分类： | JFETs |
| 英文描述： | 17 A, 1200 V, 0.57 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-25 |
| 文件页数： | 6/6页 |
| 文件大小： | 319K |
| 代理商： | APTM120DDA57T3 |
APTM120DDA57T3
A
P
T
M
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D
A
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0
S
ept
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2004
APT website – http://www.advancedpower.com
6 – 6
Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
120
140
160
180
5
1015
20
253035
ID, Drain Current (A)
t d(o
n
)a
nd
t
d(
off
)(n
s
)
VDS=800V
RG=5
TJ=125°C
L=100H
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
5
10
15
20253035
ID, Drain Current (A)
t r
an
d
t
f(n
s)
VDS=800V
RG=5
TJ=125°C
L=100H
Switching Energy vs Current
Eon
Eoff
0
0.5
1
1.5
2
2.5
3
5
101520
25
3035
ID, Drain Current (A)
S
w
itch
in
gE
n
er
g
y(
m
J)
VDS=800V
RG=5
TJ=125°C
L=100H
Eon
Eoff
0
1
2
3
4
0
5
10
15
20
25
30
35
Gate Resistance (Ohms)
Sw
it
ch
in
gEne
rgy
(m
J)
Switching Energy vs Gate Resistance
VDS=800V
ID=17A
TJ=125°C
L=100H
Hard
switching
ZCS
ZVS
0
25
50
75
100
125
150
175
200
225
4
6
8
101214
16
ID, Drain Current (A)
Fr
eq
u
en
cy
(
kH
z)
Operating Frequency vs Drain Current
VDS=800V
D=50%
RG=5
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
I DR
,R
ever
se
D
rai
n
C
u
rr
en
t(
A
)
Source to Drain Diode Forward Voltage
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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参数描述 |
|---|---|
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