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参数资料
| 型号： | APTM120DDA57T3 |
| 元件分类： | JFETs |
| 英文描述： | 17 A, 1200 V, 0.57 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封装： | MODULE-25 |
| 文件页数： | 4/6页 |
| 文件大小： | 319K |
| 代理商： | APTM120DDA57T3 |
APTM120DDA57T3
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2004
APT website – http://www.advancedpower.com
4 – 6
Typical Performance Curve
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
The
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m
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(°
C
/W
)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
5V
5.5V
6V
6.5V
7V
0
10
20
30
40
50
0
5
10
15
20
25
30
VDS, Drain to Source Voltage (V)
I D
,Dr
a
in
Cu
rr
en
t
(A
)
VGS=15, 10 & 8V
Low Voltage Output Characteristics
Transfert Characteristics
TJ=-55°C
TJ=25°C
TJ=125°C
0
10
20
30
40
50
60
70
80
01234
56789
VGS, Gate to Source Voltage (V)
I D
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a
in
Cu
rr
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t(
A
)
VDS > ID(on)xRDS(on)MAX
250s pulse test @ < 0.5 duty cycle
RDS(on) vs Drain Current
VGS=10V
VGS=20V
0.8
0.9
1
1.1
1.2
1.3
1.4
0
10203040
ID, Drain Current (A)
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O
N
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Normalized to
VGS=10V @ 8.5A
0
4
8
12
16
20
25
50
75
100
125
150
TC, Case Temperature (°C)
I D
,DC
D
ra
in
Cu
rr
e
n
t
(A
)
DC Drain Current vs Case Temperature
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相关代理商/技术参数 |
参数描述 |
|---|---|
| APTM120DDA57T3G | 功能描述:MOSFET MOD DUAL BOOST CHOP SP3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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