参数资料
型号: APTM50UM25S
厂商: MICROSEMI POWER PRODUCTS GROUP
元件分类: JFETs
英文描述: 149 A, 500 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
文件页数: 2/4页
文件大小: 283K
代理商: APTM50UM25S
APTM50UM25S
A
P
T
M
50U
M
25S
R
ev
1
J
une
,2004
APT website – http://www.advancedpower.com
2 – 6
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
BVDSS
Drain - Source Breakdown Voltage
VGS = 0V, ID = 500A
500
V
VGS = 0V,VDS= 500V
Tj = 25°C
400
IDSS
Zero Gate Voltage Drain Current
VGS = 0V,VDS= 400V
Tj = 125°C
1000
A
RDS(on)
Drain – Source on Resistance
VGS = 10V, ID = 74.5A
25
m
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 10mA
3
5
V
IGSS
Gate – Source Leakage Current
VGS = ±30 V, VDS = 0V
±200
nA
Dynamic Characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input Capacitance
17.5
Coss
Output Capacitance
3.6
Crss
Reverse Transfer Capacitance
VGS = 0V
VDS = 25V
f = 1MHz
0.24
nF
Qg
Total gate Charge
364
Qgs
Gate – Source Charge
96
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 250V
ID = 149A
196
nC
Td(on)
Turn-on Delay Time
15
Tr
Rise Time
21
Td(off)
Turn-off Delay Time
73
Tf
Fall Time
Inductive Switching @ 125°C
VGS = 15V
VBus = 333V
ID = 149A
RG = 1.2
52
ns
Series diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 85°C
120
A
IF = 120A
1.1
1.15
IF = 240A
1.4
VF
Diode Forward Voltage
IF = 120A
Tj = 125°C
0.9
V
Tj = 25°C
31
trr
Reverse Recovery Time
IF = 120A
VR = 133V
di/dt = 400A/s
Tj = 125°C
60
ns
Tj = 25°C
120
Qrr
Reverse Recovery Charge
IF = 120A
VR = 133V
di/dt = 400A/s
Tj = 125°C
500
nC
Parallel diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min
Typ
Max
Unit
IF(AV)
Maximum Average Forward Current
50% duty cycle
Tc = 80°C
100
A
IF = 100A
1.6
1.8
IF = 200A
1.9
VF
Diode Forward Voltage
IF = 100A
Tj = 125°C
1.4
V
Tj = 25°C
180
trr
Reverse Recovery Time
IF = 100A
VR = 400V
di/dt = 200A/s
Tj = 125°C
220
ns
Tj = 25°C
390
Qrr
Reverse Recovery Charge
IF = 100A
VR = 400V
di/dt = 200A/s
Tj = 125°C
1450
nC
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