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参数资料
| 型号： | APTM50UM25S |
| 厂商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分类： | JFETs |
| 英文描述： | 149 A, 500 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件页数： | 4/4页 |
| 文件大小： | 283K |
| 代理商： | APTM50UM25S |
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
AP95N25W
0
4
8
12
16
0
40
80
120
160
200
240
Q G , Total Gate Charge (nC)
V
GS
,
G
a
te
to
S
o
u
rc
e
Voltage
(
V
)
V DS = 120 V
V DS = 160 V
V DS = 200 V
I D =50 A
Q
VG
10V
QGS
QGD
QG
Charge
1
10
100
1000
10000
1
6
11
16
21
26
31
V DS ,Drain-to-Source Voltage (V)
C
(
p
F)
f=1.0MHz
C iss
C oss
C rss
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
N
o
rmalize
d
T
h
e
rmal
Re
spon
se
(
R
th
jc
)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.1
1
10
100
1000
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
I
D
(A
)
T c =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
20
40
60
02468
V GS , Gate-to-Source Voltage (V)
I
D
,
Dr
a
in
C
u
rr
e
nt
(A
)
T j =150
o C
T j =25
o C
V DS =10V
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相关代理商/技术参数 |
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|---|---|
| APTM50UM25SG | 功能描述:MOSFET N-CH 500V 149A J3 RoHS:是 类别:半导体模块 >> FET 系列:- 标准包装:10 系列:* |
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