参数资料
| 型号： | AS1369-BWLT-33 |
| 厂商： | ams |
| 文件页数： | 4/22页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 3.3V .2A 4WLCSP |
| 标准包装： | 1 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 3.3V |
| 输入电压： | 最高 5.5V |
| 电压 - 压降（标准）： | 0.08V @ 200mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 200mA |
| 电流 - 限制（最小）： | 210mA |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 4-UFBGA，WLCSP |
| 供应商设备封装： | 4-WLCSP |
| 包装： | 标准包装 |
| 其它名称： | AS1369-BWLT-33DKR |
AS1369
Datasheet - A b s o l u t e M a x i m u m R a t i n g s
5 Absolute Maximum Ratings
Stresses beyond those listed in Table 2 may cause permanent damage to the device. These are stress ratings only, and functional operation of
the device at these or any other conditions beyond those indicated in Electrical Characteristics on page 4 is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Table 2. Absolute Maximum Ratings
1
Parameter
Min
Max
Units
Comments
Electrical Parameters
Input/Output Voltage
Input Supply Voltage
Shutdown Input Voltage
Output Voltage
I OUT
2
-0.3
-0.3
-0.3
-0.3
+7
+7
+7
+7
V
V
V
V
Short-circuit protected
Latch-Up
-100
+100
mA
Norm: JEDEC 78
Electrostatic Discharge
ESD
2
500
kV
V
Norm: MIL 883 E method 3015
CDM JESD22-C101C methods
Temperature Ranges and Storage Conditions
Thermal Resistance, ? JA
3
345
oC/W
The maximum allowable power dissipation is a function of the
maximum junction temperature (T J(MAX ), the junction-to-
ambient thermal resistance ( ? JA ), and the ambient
temperature (T AMB ). The maximum allowable power
dissipation at any ambient temperature is calculated as:
P (MAX) = (T J(MAX) - (T AMB ))/ ? JA (EQ 1)
Where:
The value of ? JA for the WLP package is 345°C/W.
Operating Junction Temperature
Storage Temperature Range
-40
-65
+125
+150
oC
oC
Package Body Temperature
+260
oC
The reflow peak soldering temperature (body temperature)
specified is in accordance with IPC/JEDEC J-STD-020
“Moisture/Reflow Sensitivity Classification for Non-Hermetic
Solid State Surface Mount Devices”.
1. The AS1369 uses an internal protective structure against light influence. However, exposing the WLP package to direct light could
cause device malfunction.
2. The output PNP structure contains a diode between pins V IN and V OUT that is normally reverse-biased. reversing the polarity of pins
V IN and V OUT will activate this diode.
3. Exceeding the maximum allowable dissipation will cause excessive device temperature and the regulator will go into thermal shutdown.
www.austriamicrosystems.com/LDOs/AS1369
Revision 1.7
3 - 21
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AS1369-BWLT-33-10K | 制造商:AMS 功能描述:IC REG LDO 3.3V 0.2A 4WLCSP |
| AS1369BWLT33-10K | 制造商:AMS 功能描述:IC REG LDO 3.3V 0.2A 4WLCSP |
| AS1369BWLT33-1K | 制造商:AMS 功能描述:IC REG LDO 3.3V 0.2A 4WLCSP |
| AS1369-BWLT-45 | 制造商:AMSCO 制造商全称:austriamicrosystems AG 功能描述:200mA Ultra-Compact Low Dropout Regulator |
| AS1369-BWLT-50 | 制造商:AMSCO 制造商全称:austriamicrosystems AG 功能描述:200mA Ultra-Compact Low Dropout Regulator |
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