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参数资料
| 型号： | AS5SS256K18DQ-10/IT |
| 厂商： | AUSTIN SEMICONDUCTOR INC |
| 元件分类： | SRAM |
| 英文描述： | 256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through |
| 中文描述： | 256K X 18 STANDARD SRAM, 10 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 10/13页 |
| 文件大小： | 135K |
| 代理商： | AS5SS256K18DQ-10/IT |
AS5SS256K18
Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
6
SSRAM
AS5SS256K18
Austin Semiconductor, Inc.
I
DD
ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS
(-55oC < T
A < +125
oC and -40oC<T
A<+85
oC; V
DD = +3.3V +0.3V/-0.165V unless otherwise noted)
CONDITIONS
SYM
-8
-9
-10
UNITS NOTES
Device selected; all inputs < VIL or > VIH;
Cycle time > tKC (MIN); VDD = MAX; Outputs Open
IDD
375
325
250
mA
2, 3, 4
Power Supply Current:
Idle
Device selected; VDD = MAX; ADSC\, ADSP\,
ADV\, GW\, BWx\ > VIH; All inputs < VSS +0.2 or
> VDDQ -0.2; Cycle time >
t
KC (MIN);
Outputs Open
IDD1
100
85
65
mA
2, 3, 4
CMOS Standby
Device deselected; VDD = MAX;
All inputs < Vss +0.2 or > VDDQ -0.2;
All inputs static; CLK frequency =0
ISB2
10
mA
3, 4
TTL Standby
Device deselected; VDD = MAX;
All inputs < VIL or > VIH;
All inputs static; CLK frequency = 0
ISB3
25
mA
3, 4
Clock Running
Device deselected; VDD = MAX;
ASDP\, ADV\, GW\, BWx\ > VIH;
All inputs < VSS +0.2 or > VDDQ -0.2;
Cycle time >
t
KC (MIN)
ISB4
100
85
65
mA
3, 4
Power Supply Current:
Operating
PARAMETER
MAX
NOTES:
1. V
DD
Q = +3.3V +0.3V/-0.165V for 3.3V I/O configuration.
2. I
DD
is specified with no output current and increases with faster cycle times. I
DD
Q increases with faster cycle
times and greater output loading.
3. “Device deselected” means device is in power-down mode as defined in the truth table. “Device selected” means
device is active (not in power-down mode).
4. Typical values are measured at 3.3V, 25°C and 15ns cycle time.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AS5SS256K18DQ-8 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x18 Fast Synchronous SRAM |
| AS5SS256K18DQ-8/IT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through |
| AS5SS256K18DQ-8IT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through |
| AS5SS256K18DQ-9 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x18 Fast Synchronous SRAM |
| AS5SS256K18DQ-9/IT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through |
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