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参数资料
| 型号： | AS5SS256K18DQ-9/XT |
| 厂商： | AUSTIN SEMICONDUCTOR INC |
| 元件分类： | SRAM |
| 英文描述： | 256K x 18 SSRAM Synchronous Burst SRAM, Flow-Through |
| 中文描述： | 256K X 18 STANDARD SRAM, 8.5 ns, PQFP100 |
| 封装： | TQFP-100 |
| 文件页数： | 7/13页 |
| 文件大小： | 135K |
| 代理商： | AS5SS256K18DQ-9/XT |
AS5SS256K18
Rev. 2.1 06/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
3
SSRAM
AS5SS256K18
Austin Semiconductor, Inc.
INTERLEAVED BURST ADDRESS TABLE (MODE=NC OR HIGH)
LINEAR BURST ADDRESS TABLE (MODE=LOW)
FUNCTIONAL BLOCK DIAGRAM
NOTE: The Functional Block Diagram illustrates simplified device operation. See Truth Table, pin descriptions and timing
diagrams for detailed information.
18
16
18
SA0, SA1, SA
MODE
ADV\
CLK
ADSC\
ADSP\
BWb\
BWa\
BWE\
GW\
CE\
CE2
CE2\
OE\
2
ADDRESS
REGISTER
BINARY
COUNTER AND
LOGIC
BYTE "b"
WRITE REGISTER
BYTE "a"
WRITE REGISTER
ENABLE
REGISTER
CLR
Q1
Q0
SA1'
SA0'
INPUT
REGISTERS
OUTPUT
BUFFERS
SENSE
AMPS
256K x 9 x 2
MEMORY
ARRAY
9
BYTE "b"
WRITE DRIVER
BYTE "a"
WRITE DRIVER
9
18
DQs
DQPa
DQPb
2
SA0-SA1
FIRST ADDRESS (EXTERNAL) SECOND ADDRESS (INTERNAL) THIRD ADDRESS (INTERNAL) FOURTH ADDRESS (INTERNAL)
X…X00
X…X01
X…X10
X…X11
X…X01
X…X00
X…X11
X…X10
X…X11
X…X00
X…X01
X…X11
X…X10
X…X01
X…X00
FIRST ADDRESS (EXTERNAL) SECOND ADDRESS (INTERNAL) THIRD ADDRESS (INTERNAL) FOURTH ADDRESS (INTERNAL)
X…X00
X…X01
X…X10
X…X11
X…X01
X…X10
X…X11
X…X00
X…X10
X…X11
X…X00
X…X01
X…X11
X…X00
X…X01
X…X10
PARTIAL TRUTH TABLE FOR WRITE COMMANDS
FUNCTION
GW\
BWE\
BWa\
BWb\
READ
H
X
READ
H
L
H
WRITE Byte "a"
H
L
H
WRITE Byte "b"
H
L
H
L
WRITE All Bytes
H
L
WRITE All Bytes
L
X
NOTE: Using BWE\ and BWa\ through BWb\, any one or more bytes may be
written.
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