- 您现在的位置：买卖IC网 > PDF目录298830 > AS6C4008-55PCN (ALLIANCE MEMORY INC) IC,AS6C4008-55PCN,DIP-32 LP SRAM,55NS,512K X 8,2.7-5.5V PDF资料下载
参数资料
| 型号： | AS6C4008-55PCN |
| 厂商： | ALLIANCE MEMORY INC |
| 元件分类： | SRAM |
| 英文描述： | IC,AS6C4008-55PCN,DIP-32 LP SRAM,55NS,512K X 8,2.7-5.5V |
| 中文描述： | 512K X 8 STANDARD SRAM, 55 ns, PDIP32 |
| 封装： | 0.600 INCH, ROHS COMPLIANT, PLASTIC, DIP-32 |
| 文件页数： | 8/14页 |
| 文件大小： | 1335K |
| 代理商： | AS6C4008-55PCN |
ABSOLUTE MAXIMUM RATINGS*
PARAMETER
SYMBOL
RATING
UNIT
Terminal Voltage with Respect to VSS
VTERM
-0.5 to 6.5
V
0 to 70(C grade)
T
e
r
u
t
a
r
e
p
m
e
T
g
n
it
a
r
e
p
O
A
-40 to 85(I grade)
T
e
r
u
t
a
r
e
p
m
e
T
e
g
a
r
o
t
S
STG
-65 to 150
C
P
n
o
it
a
p
i
s
i
D
r
e
w
o
P
D
1
W
I
t
n
e
r
u
C
t
u
p
t
u
O
C
D
OUT
50
mA
Soldering Temperature (under 10 sec)
TSOLDER
260
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
TRUTH TABLE
MODE
CE#
OE#
WE#
I/O OPERATION
SUPPLY CURRENT
Standby
H
X
High-Z
ISB1
Output Disable
L
H
High-Z
ICC,ICC1
Read
L
H
DOUT
ICC,ICC1
Write
L
X
L
DIN
ICC,ICC1
Note: H = VIH, L = VIL, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITION
MIN.
TYP.
*3
MAX.
UNIT
Supply Voltage
VCC
V
5
.
5
0
.
3
7
.
2
Input High Voltage
VIH*1
0.7*Vcc
-
VCC+0.3
V
Input Low Voltage
VIL*1
V
6
.
0
-
2
.
0
-
Input Leakage Current
ILI
VCC ≧ VIN ≧ VSS
- 1
-
1
A
Output Leakage
Current
ILO
VCC ≧ VOUT ≧ VSS,
Output Disabled
- 1
-
1
A
Output High Voltage
VOH
IOH
V
-
4
.
2
A
m
1
-
=
Output Low Voltage
VOL
IOL = 2mA
-
0.4
V
- 55
-
30
60
mA
ICC
Cycle time = Min.
CE# = 0.2V, II/O = 0mA
other pins at 0.2V or VCC - 0.2V
Average Operating
Power supply Current
ICC1
Cycle time = 1s
CE# = 0.2V, II/O = 0mA
other pins at 0.2V or VCC - 0.2V
-
4
10
mA
-LL
-
4
50 *4
A
Standby Power
Supply Current
ISB1
CE# V
≧ CC
- 0.2V
-LLE/-LLI
-
4
50 *4
A
Notes: 1. VIH(max) = VCC + 3.0V for pulse width less than 10ns. VIL(min) = VSS - 3.0V for pulse width less than 10ns.
2. Over/Undershoot specifications are characterized, not 100% tested.
3. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at VCC = VCC(TYP.) and TA = 25?
4. 25A for special request
o
C o
2009
512K X 8 BIT LOW POWER CMOS SRAM
AS6C4008
AUG/09, v 1.4
Alliance Memory Inc
Page 3 of 14
相关PDF资料 |
PDF描述 |
|---|---|
| AS6C4008-55SIN | IC,AS6C4008-55SIN,SOP-32 LP SRAM,55NS,512K X 8,2.7-5.5V |
| AS6C4008-55STIN | IC,AS6C4008-55STIN,STSOP-32 LP SRAM,55NS,512K X 8,2.7-5.5V |
| AS6C4008-55TIN | IC,AS6C4008-55TIN,TSOP-32 LP SRAM,55NS,512K X 8,2.7-5.5V |
| AS6C6264-55PCN | IC,AS6C6264-55PCN,DIP-28 LP SRAM,55NS,8K X 8,2.7-5.5V |
| AS7C1024B-12JCN | IC,AS7C1024B-12JCN,SOJ-32 SRAM,12NS,128K X 8,5V |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AS6C4008-55PIN | 功能描述:静态随机存取存储器 4M, 2.7-5.5V, 55ns 512K x 8 Asynch 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| AS6C4008-55SIN | 功能描述:静态随机存取存储器 4M, 2.7-5.5V, 55ns 512K x 8 Asynch 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| AS6C4008-55SINTR | 功能描述:静态随机存取存储器 4M, 2.7-5.5V, 55ns 512K x 8 Asynch 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| AS6C4008-55STIN | 功能描述:静态随机存取存储器 4M, 2.7-5.5V, 55ns 512K x 8 Asynch 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| AS6C4008-55STINR | 功能描述:静态随机存取存储器 4M, 2.7-5.5V, 55ns 512K x 8 Asynch 静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。