参数资料
型号: AS7C33512NTD18A-166BC
厂商: INTEGRATED SILICON SOLUTION INC
元件分类: SRAM
英文描述: 512K X 18 ZBT SRAM, 9 ns, PBGA119
封装: 14 X 20 MM, BGA-119
文件页数: 8/12页
文件大小: 299K
代理商: AS7C33512NTD18A-166BC
AS7C33512NTD16A
AS7C33512NTD18A
3/11/02;
v.1.8H
Alliance Semiconductor
5 of 12
Key: X = Don’t Care, L = Low, H = High.
State Diagram for NTD SRAM
Synchronous truth table
CE0
CE1
CE2
ADV/LD
R/W
BW[a,b]
OE
CEN
Address source
CLK
Operation
H
X
L
X
L
NA
L to H
Deselect, high-Z
X
L
X
L
X
L
NA
L to H
Deselect, high-Z
X
H
L
X
L
NA
L to H
Deselect, high-Z
L
H
L
H
X
L
External
L to H
Begin read
L
H
L
X
L
External
L to H
Begin write
XX
X
H
X
X1
1
Should be low for Burst write, unless a specific byte/s need/s to be inhibited
X
L
Burst counter
L to H
Burst2
2 Refer to state diagram below.
X
H
Stall
L to H
Inhibit the CLK
Recommended operating conditions
Parameter
Symbol
Min
Nominal
Max
Unit
Supply voltage
VDD
3.135
3.3
3.6
V
VSS
0.0
3.3V I/O supply
voltage
VDDQ
3.135
3.3
3.6
V
VSSQ
0.0
2.5V I/O supply
voltage
VDDQ
2.35
2.5
2.65
V
VSSQ
0.0
Input voltages1
1 Input voltage ranges apply to 3.3V I/O operation. For 2.5V I/O operation, contact factory for input specifications.
Address and
control pins
VIH
2.0
VDD + 0.3
V
VIL
–0.52
2 VIL min = –2.0V for pulse width less than 0.2 × tRC.
–0.8
I/O pins
VIH
2.0
VDDQ + 0.3
V
VIL
–0.8
Ambient operating temperature
TA
0–
70
°C
Dsel
Read
Burst
Write
Read
Write
Burst
Read
Wr
it
e
Dsel
Rea
d
Burst
Write
Ds
el
Dse
l
Wr
ite
W
rit
e
Burst
Dsel
Burst
Write
Read
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AS7C33512NTD18A-166TQI 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD
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