- 您现在的位置：买卖IC网 > PDF目录166232 > AS7C33512NTD18A-166BC (INTEGRATED SILICON SOLUTION INC) 512K X 18 ZBT SRAM, 9 ns, PBGA119 PDF资料下载
参数资料
| 型号： | AS7C33512NTD18A-166BC |
| 厂商： | INTEGRATED SILICON SOLUTION INC |
| 元件分类： | SRAM |
| 英文描述： | 512K X 18 ZBT SRAM, 9 ns, PBGA119 |
| 封装： | 14 X 20 MM, BGA-119 |
| 文件页数： | 9/12页 |
| 文件大小： | 299K |
| 代理商： | AS7C33512NTD18A-166BC |
AS7C33512NTD16A
AS7C33512NTD18A
3/11/02;
v.1.8H
Alliance Semiconductor
6 of 12
TQFP thermal resistance
Description
Conditions
Symbol
Typical
Units
Thermal resistance
(junction to ambient)1
1 This parameter is sampled.
Test conditions follow standard test methods
and procedures for measuring thermal
impedance, per EIA/JESD51
1–layer
θ
JA
40
°C/W
4–layer
θ
JA
22
°C/W
Thermal resistance
(junction to top of case)1
θ
JC
8
°C/W
DC electrical characteristics
Parameter
Symbol
Test conditions
–166
–150
–133
–100
Unit
Min Max Min Max Min Max Min Max
Input leakage
current
|ILI|
1
1 LBO pin has an internal pull-up and input leakage = ±10
A.
VDD = Max, VIN = GND to VDD
–
2
–2–2–2
A
Output leakage
current
|ILO|
OE
≥ V
IH, VDD = Max,
VOUT = GND to VDD
–
2
–2–2–2
A
Operating power
supply current
ICC
2
2 ICC give with no output loading. ICC increases with faster cycle times and greater output loading.
CE0 = VIL, CE1 = VIH, CE2 = VIL,
f = fMax, IOUT = 0 mA
–
475
–
425
–
400
–
300
mA
Standby power
supply current
ISB
Deselected, f = fMax, ZZ ≤ VIL
–
130
–
110
–
100
–
90
mA
ISB1
Deselected, f = 0, ZZ
≤ 0.2V
all VIN ≤ 0.2V or ≥ VDD – 0.2V
–30–30
ISB2
Deselected, f = fMax, ZZ ≥ VDD – 0.2V
All VIN ≤ VIL or ≥ VIH
–30–30
Output voltage
VOL
IOL = 8 mA, VDDQ = 3.465V
–
0.4
–
0.4
–
0.4
–
0.4
V
VOH
IOH = –4 mA, VDDQ = 3.135V
2.4
–
2.4
–
2.4
–
2.4
–
DC electrical characteristics for 2.5V I/O operation
Parameter
Symbol
Test conditions
–166
–150
–133
–100
Unit
Min Max Min Max Min Max Min Max
Output leakage
current
|ILO|
OE
≥ V
IH, VDD = Max,
VOUT = GND to VDD
–1
1–1
1
–11
–1
1
A
Output voltage
VOL
IOL = 2 mA, VDDQ = 2.65V
–
0.7
–
0.7
–
0.7
–
0.7
V
VOH
IOH = –2 mA, VDDQ = 2.35V
1.7
–
1.7
–
1.7
–
1.7
–
相关PDF资料 |
PDF描述 |
|---|---|
| AS7C3364FT36B-65TQCN | 64K X 36 STANDARD SRAM, 6.5 ns, PQFP100 |
| AS7C3364FT36B-80TQC | 64K X 36 STANDARD SRAM, 8 ns, PQFP100 |
| AS7C34098-35JC | 256K X 16 STANDARD SRAM, 35 ns, PDSO44 |
| AS7C4098-35JI | 256K X 16 STANDARD SRAM, 35 ns, PDSO44 |
| AS7C3512K16Z-4BC | 512K X 16 ZBT SRAM, 4 ns, PBGA119 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AS7C33512NTD18A-166TQC | 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD |
| AS7C33512NTD18A-166TQCN | 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD |
| AS7C33512NTD18A-166TQI | 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD |
| AS7C33512NTD18A-166TQIN | 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 18 Pipelined burst Synchronous SRAM with NTD |
| AS7C33512NTD32A | 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 512K x 32/36 Pipelined SRAM with NTD |
发布紧急采购，3分钟左右您将得到回复。