参数资料
型号: AS7C3364NTD36B-133TQIN
厂商: INTEGRATED SILICON SOLUTION INC
元件分类: SRAM
英文描述: 64K X 36 ZBT SRAM, 4 ns, PQFP100
封装: 14 X 20 MM, LEAD FREE, TQFP-100
文件页数: 18/19页
文件大小: 437K
代理商: AS7C3364NTD36B-133TQIN
AS7C3364NTD32B
AS7C3364NTD36B
4/28/05; v.1.3
Alliance Semiconductor
P. 8 of 19
DC electrical characteristics for 3.3V I/O operation
DC electrical characteristics for 2.5V I/O operation
LBO pin has an internal pull-up and input leakage = -10
A.
*VIH max < VDD +1.5V for pulse width less than 0.2 X tCYC
**VIL min = -1.5 for pulse width less than 0.2 X tCYC
IDD operating conditions and maximum limits
Parameter
Sym
Conditions
Min
Max
Unit
Input leakage current
|ILI|VDD = Max, 0V < VIN < VDD
-2
2
A
Output leakage current
|ILO|OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ
-2
2
A
Input high (logic 1) voltage
VIH
Address and control pins
2*
VDD+0.3
V
I/O pins
2*
VDDQ+0.3
Input low (logic 0) voltage
VIL
Address and control pins
-0.3**
0.8
V
I/O pins
-0.5**
0.8
Output high voltage
VOH
IOH = –4 mA, VDDQ = 3.135V
2.4
V
Output low voltage
VOL
IOL = 8 mA, VDDQ = 3.465V
0.4
V
Parameter
Sym
Conditions
Min
Max
Unit
Input leakage current
|ILI|VDD = Max, 0V < VIN < VDD
-2
2
A
Output leakage current
|ILO|OE ≥ VIH, VDD = Max, 0V < VOUT < VDDQ
-2
2
A
Input high (logic 1) voltage
VIH
Address and control pins
1.7*
VDD+0.3
V
I/O pins
1.7*
VDDQ+0.3
V
Input low (logic 0) voltage
VIL
Address and control pins
-0.3**
0.7
V
I/O pins
-0.3**
0.7
V
Output high voltage
VOH
IOH = –4 mA, VDDQ = 2.375V
1.7
V
IOH = –1 mA, VDDQ = 2.375V
2.0
Output low voltage
VOL
IOL = 8 mA, VDDQ = 2.625V
0.7
V
IOL = 1 mA, VDDQ = 2.625V
0.4
Parameter
Sym
Test conditions
-200
-166
-133
Unit
Operating power supply
current1
1 ICC given with no output loading. ICC increases with faster cycle times and greater output loading.
ICC
CE0 < VIL, CE1 > VIH, CE2 < VIL, f = fMax,
IOUT = 0 mA, ZZ < VIL
375
350
325
mA
Standby power supply
current
ISB
All VIN ≤ 0.2V or > VDD – 0.2V, Deselected,
f = fMax, ZZ < VIL
135
120
110
mA
ISB1
Deselected, f = 0, ZZ
< 0.2V,
all VIN ≤ 0.2V or ≥ VDD – 0.2V
30
ISB2
Deselected, f = fMax, ZZ ≥ VDD – 0.2V,
all VIN ≤ VIL or ≥ VIH
30
相关PDF资料
PDF描述
AS7C3364NTD36B-200TQC 64K X 36 ZBT SRAM, 3 ns, PQFP100
ASD15-12D15 2-OUTPUT 7.5 W DC-DC REG PWR SUPPLY MODULE
ASD75-48S5Q-N 1-OUTPUT 75 W DC-DC REG PWR SUPPLY MODULE
ASE3-FREQ-D-Y-T CRYSTAL OSCILLATOR, CLOCK, 0.5 MHz - 133 MHz, CMOS OUTPUT
ASE62G SLIDE SWITCH, 6PDT, LATCHED, THROUGH HOLE-STRAIGHT
相关代理商/技术参数
参数描述
AS7C3364NTD36B-166TQC 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Pipelined SRAM with NTD
AS7C3364NTD36B-166TQCN 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Pipelined SRAM with NTD
AS7C3364NTD36B-166TQI 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Pipelined SRAM with NTD
AS7C3364NTD36B-166TQIN 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Pipelined SRAM with NTD
AS7C3364NTD36B-200TQC 制造商:ALSC 制造商全称:Alliance Semiconductor Corporation 功能描述:3.3V 64K x 32/36 Pipelined SRAM with NTD