参数资料
| 型号： | AS8510-ASST |
| 厂商： | ams |
| 文件页数： | 4/47页 |
| 文件大小： | 0K |
| 描述： | IC BATTERY MANAGEMENT 20-SSOP |
| 产品培训模块： | AS8510 Data Acquisition IC |
| 标准包装： | 2,000 |
| 类型： | 电池管理 |
| 输入类型： | 模拟，数字 |
| 输出类型： | 模拟，数字 |
| 接口： | SPI 串行 |
| 电流 - 电源： | 5mA |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 20-SSOP（0.209"，5.30mm 宽） |
| 供应商设备封装： | 20-SSOP |
| 包装： | 带卷 (TR) |
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Revision 3.5
11 - 46
AS8510
Datasheet - Electrical Character i s t ics
6.4.2 Differential Input Amplifier for Voltage Channel
Notes:
1. Input for the voltage channel can be as high as 1220mV, in this high input case PGA will be bypassed.
2. Leakage test accuracy is limited by tester resource accuracy and tester hardware, especially at low temperatures due to condensing
moisture.
3. For gain 100 PGA input common mode is 0V and the minimum supply is 3.15V.
4. The measurement ranges are referred only by the gain of input amplifier, while other parameters such as bandwidth etc. are pro-
grammed independently.
5. This parameter is not measured directly in production. It is measured indirectly via gain measurements of the whole path. It is guaran-
teed by design.
6. Pole frequency of input amplifier changes with changing the GAIN. The number is valid for the gain at G1, while the bandwidth will be
higher for other ranges. This parameter is not measured in production.
7. Noise density calculated by taking system bandwidth as 150Hz.
8. Based on device evaluation. Not tested.
9. No impact on the measurement path. If the chopping is enabled, both the offset and offset drift will be eliminated.
10. For negative input voltages up to -160mV below ground, Input leakage is typically -20nA @ 65C due to forward conductance of
protection diode.
Table 16. Differential Input Amplifier for Voltage Channel
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VIN_AMP
Input voltage range
1, 10
-160
+160
mV
IIN_AMP
Input current
2, 10
VBAT_IN, ETR, ETS @ +160mV input
voltage at 125C with PGA
-50
2
50
nA
ICM
Absolute input voltage range
3
-160
+300
mV
G = G1
Gain1
4, 5
100
G = G2
Gain2
4, 5
40
G = G3
Gain3
4, 5
25
G = G4
Gain4
4, 5
5
e
Gain deviation
i = 1, 2, 3, 4
0.9 * Gi
1.1 * Gi
fP_AMP
Pole frequency
5, 6
15
kHz
VNDIN
Noise density
5, 7
25
nV/
√Hz
THD
Total harmonic distortion
For 150Hz input signal
70
dB
εT1
Gain drift with temperature
8
-20C to +65C
Gain 5, 25, referenced to room
temperature
±0.3
%
VOS
Input referred offset
9
After trim at +65C
350
V
Vos_ch
Chopping enabled
0
LSB
VOSDRIFT
Offset drift with temperature
9
350
V
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