参数资料
型号: AS8510-ASST
厂商: ams
文件页数: 8/47页
文件大小: 0K
描述: IC BATTERY MANAGEMENT 20-SSOP
产品培训模块: AS8510 Data Acquisition IC
标准包装: 2,000
类型: 电池管理
输入类型: 模拟,数字
输出类型: 模拟,数字
接口: SPI 串行
电流 - 电源: 5mA
安装类型: 表面贴装
封装/外壳: 20-SSOP(0.209",5.30mm 宽)
供应商设备封装: 20-SSOP
包装: 带卷 (TR)
Revision 3.5
15 - 46
AS8510
Datasheet - Electrical Character i s t ics
6.4.12 Internal Temperature Sensor
6.5 System Specifications
System Measurement Error Budget for Voltage and Current Channel.
Temperature Range: -20C to +65C; Output data rate is 1kHz, VCC = 3.3V, chopping enabled.
Notes:
1. These specifications are defined by taking one channel as reference and measured on the other channel.
2. Guaranteed by design.
3. System measurement error due to noise, individual block parameter drifts and non linearity. Based on evaluation, not tested.
4. System error due to offset is neglected because of chopper architecture.
Table 26. Internal Temperature Sensor
Symbol
Parameter
Conditions
Min
Typ
Max
Units
TINTRNG
Temperature sensor range
-40
125
C
ΔTIN
Temperature measurement accuracy
3
C
TINTSLP
Temperature sensor slope
Guaranteed by design; at PGA gain 5
which is the recommended Gain for
internal temperature measurement.
27
Digits/C
TINT65G5
Temperature sensor output at gain 5
40660
41807
43012
Digits
Table 27. System Specifications
Symbol
Parameter
Min
Typ
Max
Units
IS
Channel to channel isolation
1
-90
dB
At
Difference in channel to channel attenuation
@600Hz
1, 2
3dB
Ph
Difference in phase shift between the two
channels @600Hz
1, 2
5Deg
Table 28. System Measurement Error Budget for Gains 5 and 25
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Err
System measurement error
3, 4
±0.5
±0.8
%
Measurement error due to PGA gain drift
From device evaluation
±0.3
%
Measurement error due to VREF drift6
±0.4
%
Measurement error due to non-linearity of PG Tested by distortion measurements
±0.025
%
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