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参数资料
| 型号： | AS8ER128K32Q-200/IT |
| 厂商： | AUSTIN SEMICONDUCTOR INC |
| 元件分类： | PROM |
| 英文描述： | 128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY |
| 中文描述： | 128K X 32 EEPROM 5V MODULE, 200 ns, CQFP68 |
| 封装： | 0.880 INCH, 0.200 INCH HIEGHT, CERAMIC, QFP-68 |
| 文件页数： | 13/18页 |
| 文件大小： | 550K |
| 代理商： | AS8ER128K32Q-200/IT |
EEPROM
AS8ER128K32
AS8ER128K32
Rev. 5.3 6/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
4
Austin Semiconductor, Inc.
NOTE: 1. This parameter is guaranteed but not tested.
CAPACITANCE TABLE1 (V
IN = 0V, f = 1 MHz, TA = 25
oC)
SYMBOL
PARAMETER
MAX
UNITS
CADD
A0 - A16 Capacitance
40
pF
COE
OE\, RES\, RDY Capacitance
40
pF
CWE, CCE
WE\ and CE\ Capacitance
12
pF
CIO
I/O 0- I/O 31 Capacitance
20
pF
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-55oC < T
A < +125
oC or -40oC to +85oC; Vcc = 5V +10%)
MIN
MAX
Address to Output Delay
CE\ = OE\ = VIL, WE\ = VIH
tACC
150
ns
CE\ to Output Delay
OE\ = VIL, WE\ = VIH
tCE
150
ns
OE\ to Output Delay
OE\ = VIL, WE\ = VIH
tOE
10
75
ns
Address to Output Hold
CE\ = OE\ = VIL, WE\ = VIH
tOH
0ns
CE\ or OE\ high to Output Float (1)
OE\ = VIL, WE\ = VIH
tDF
050
ns
RES\ low to Output Float (1)
CE\ = OE\ = VIL, WE\ = VIH
tDFR
0
350
ns
RES\ to Output Delay
CE\ = OE\ = VIL, WE\ = VIH
tRR
0
450
ns
DESCRIPTION
150
SYMBOL
UNITS
TEST CONDITIONS
AC TEST CHARACTERISTICS
TEST SPECIFICATIONS
Input pulse levels...........................................V
SS to 3V
Input rise and fall times...........................................5ns
Input timing reference levels.................................1.5V
Output reference levels.........................................1.5V
Output load................................................See Figure 1
OH
OL
I
Current Source
Vz = 1.5V
(Bipolar
Supply)
Device
Under
Test
Ceff = 50pf
-+
+
NOTES:
Vz is programmable from -2V to + 7V.
I
OL and IOH programmable from 0 to 16 mA.
Vz is typically the midpoint of V
OH and VOL.
I
OL and IOH are adjusted to simulate a typical resistive load
circuit.
Figure 1
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| AS8ER128K32Q-200/XT | 128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY |
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| AS8F128K32Q-150/883C | 128K x 32 FLASH FLASH MEMORY ARRAY |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AS8ER128K32Q-250/883C | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS |
| AS8ER128K32Q-250/IT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS |
| AS8ER128K32Q-250/XT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS |
| AS8ER128K32QB-150/883C | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY |
| AS8ER128K32QB-150/IT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS |
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