参数资料
型号: AS8ER128K32Q-200/IT
厂商: AUSTIN SEMICONDUCTOR INC
元件分类: PROM
英文描述: 128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY
中文描述: 128K X 32 EEPROM 5V MODULE, 200 ns, CQFP68
封装: 0.880 INCH, 0.200 INCH HIEGHT, CERAMIC, QFP-68
文件页数: 18/18页
文件大小: 550K
代理商: AS8ER128K32Q-200/IT
EEPROM
AS8ER128K32
AS8ER128K32
Rev. 5.3 6/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
9
Austin Semiconductor, Inc.
TOGGLE BIT
This device provides another function to determine the internal programming cycle. If the EEPROM is set to read mode
during the internal programming cycle, I/O6 will charge from "1" to "0" (toggling) for each read. When the internal pro-
gramming cycle is finished, toggling of I/O6 will stop and the device can be accessible for next read or program.
TOGGLE BIT WAVEFORM
NOTES:
1) I/O6 beginning state is "1".
2) I/O6 ending state will vary.
3) See AC read characteristics.
4) Any locations can be used, but the address must be fixed.
Dout
2
Dout
2
Dout
1
Din
t
CE
3
t
OE
3
t
OEH
t
WC
t
DW
4Next Mode
t
OES
Address
CE\
WE\
OE\
I/O6
SOFTWARE DATA PROTECTION TIMING WAVEFORM (In protection mode)
t
WC
t
BLC
{
Address
Data (each byte)
5555
AA
AAAA or
2AAA
55
5555
A0
Write Address*
Write Data
V
CC
CE\
WE\
t
BLC
t
BLC
* During this write cycle, data is physically written to the address provided.
相关PDF资料
PDF描述
AS8ER128K32Q-200/XT 128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY
AS8F128K32Q-120/XT 128K x 32 FLASH FLASH MEMORY ARRAY
AS8F128K32Q-150/883C 128K x 32 FLASH FLASH MEMORY ARRAY
AS8F128K32Q-150/IT 128K x 32 FLASH FLASH MEMORY ARRAY
AS8F128K32Q-150/Q 128K x 32 FLASH FLASH MEMORY ARRAY
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