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参数资料
| 型号： | AS8ER128K32Q-200/IT |
| 厂商： | AUSTIN SEMICONDUCTOR INC |
| 元件分类： | PROM |
| 英文描述： | 128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY |
| 中文描述： | 128K X 32 EEPROM 5V MODULE, 200 ns, CQFP68 |
| 封装： | 0.880 INCH, 0.200 INCH HIEGHT, CERAMIC, QFP-68 |
| 文件页数： | 2/18页 |
| 文件大小： | 550K |
| 代理商： | AS8ER128K32Q-200/IT |
EEPROM
AS8ER128K32
AS8ER128K32
Rev. 5.3 6/05
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.
10
Austin Semiconductor, Inc.
SOFTWARE DATA PROTECTION TIMING WAVEFORM (In non-protection mode)
FUNCTIONAL DESCRIPTION
Automatic Page Write
Page-mode write feature allows 1 to 128 bytes of data to be
written into the EEPROM in a single write cycle. Following
the initial byte cycle, an additional 1 to 128 bytes can be writ-
ten in the same manner. Each additional byte load cycle must
be started within 30s from the preceding falling edge of WE\
or CE\. When CE\ or WE\ is kept high for 100s after data
input, the EEPROM enters write mode automatically and the
input data are written into the EEPROM.
DATA\ Polling
DATA\ polling allows the status of the EEPROM to be deter-
mined. If EEPROM is set to read mode during the write cycle,
an inversion of the last byte of data to be loaded outputs from
I/O's 7, 15, 23, and 31 to indicate that the EEPROM is per-
forming a write operation.
RDY/Busy\ Signal
RDY/Busy\ signal also allows status of the EEPROM to be
determined. The RDY/Busy\ signal has high impedance ex-
cept in write cycle and is lowered to V
OL
after the first write
signal. At the end of write cycle, the RDY/Busy\ signal changes
state to high impedance.
RES\ Signal
When RES\ is low, the EEPROM cannot be read or pro-
grammed. Therefore, data can be protected by keeping RES\
low when V
CC
is switched. RES\ should be high during read
and programming because it doesn't provide a latch function.
See timing diagram below.
Program inhibit
Read inhibit
V
CC
RES\
RES\ Signal Diagram
t
WC
Address
Data (each byte)
5555
AA
AAAA
or
2AAA
55
5555
80
AAAA
or
2AAA
55
V
CC
CE\
WE\
5555
AA
5555
20
Normal
active mode
相关PDF资料 |
PDF描述 |
|---|---|
| AS8ER128K32Q-200/XT | 128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY |
| AS8F128K32Q-120/XT | 128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q-150/883C | 128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q-150/IT | 128K x 32 FLASH FLASH MEMORY ARRAY |
| AS8F128K32Q-150/Q | 128K x 32 FLASH FLASH MEMORY ARRAY |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AS8ER128K32Q-250/883C | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS |
| AS8ER128K32Q-250/IT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS |
| AS8ER128K32Q-250/XT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS |
| AS8ER128K32QB-150/883C | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY |
| AS8ER128K32QB-150/IT | 制造商:AUSTIN 制造商全称:Austin Semiconductor 功能描述:128K x 32 Radiation Tolerant EEPROM AVAILABLE AS MILITARY SPECIFICATIONS |
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