参数资料
型号: AT25256W-10SI-2.7
厂商: Atmel
文件页数: 17/22页
文件大小: 0K
描述: IC EEPROM 256KBIT 3MHZ 8SOIC
标准包装: 94
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 256K (32K x 8)
速度: 2.1MHz,3MHz
接口: SPI 3 线串行
电源电压: 2.7 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.209",5.30mm 宽)
供应商设备封装: 8-SOIC
包装: 管件
AT25128/256
8S2 – EIAJ SOIC
C
1
Top View
N
E
E1
L
?
End View
e
A
b
COMMON DIMEN S ION S
(Unit of Me asu re = mm)
A1
S YMBOL
A
A1
b
C
MIN
1.70
0.05
0. 3 5
0.15
NOM
MAX
2.16
0.25
0.4 8
0. 3 5
NOTE
5
5
D
S ide View
D
E1
E
L
5.1 3
5.1 8
7.70
0.51
5. 3 5
5.40
8 .26
0. 8 5
2, 3
?
e
1.27 B S C
8 °
4
Note s : 1.
2.
3 .
4.
5.
Thi s dr a wing i s for gener a l inform a tion only; refer to EIAJ Dr a wing EDR-7 3 20 for a ddition a l inform a tion.
Mi s m a tch of the u pper a nd lower die s a nd re s in bu rr s a re not incl u ded.
It i s recommended th a t u pper a nd lower c a vitie s b e e qua l. If they a re different, the l a rger dimen s ion s h a ll b e reg a rded.
Determine s the tr u e geometric po s ition.
V a l u e s b a nd C a pply to p b / S n s older pl a ted termin a l. The s t a nd a rd thickne ss of the s older l a yer s h a ll b e 0.010 +0.010/ ? 0.005 mm.
10/7/0 3
R
2 3 25 Orch a rd P a rkw a y
Sa n Jo s e, CA 951 3 1
TITLE
8S 2 , 8 -le a d, 0.209" Body, Pl as tic S m a ll
O u tline P a ck a ge (EIAJ)
DRAWING NO.
8S 2
REV.
C
17
0872O–SEEPR–03/05
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