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参数资料
| 型号： | AT28BV256-20SU |
| 厂商： | Atmel |
| 文件页数： | 1/17页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 256KBIT 200NS 28SOIC |
| 标准包装： | 27 |
| 格式 - 存储器： | EEPROMs - 并行 |
| 存储器类型： | EEPROM |
| 存储容量： | 256K (32K x 8) |
| 速度： | 200ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 28-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 28-SOIC W |
| 包装： | 管件 |
| 产品目录页面： | 1458 (CN2011-ZH PDF) |
Features
? Single 2.7V - 3.6V Supply
? Fast Read Access Time – 200 ns
? Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
– Internal Control Timer
?
Fast Write Cycle Times
– Page Write Cycle Time: 10 ms Maximum
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?
?
?
?
?
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– 1- to 64-byte Page Write Operation
Low Power Dissipation
– 15 mA Active Current
– 20 μA CMOS Standby Current
Hardware and Software Data Protection
Data Polling for End of Write Detection
High Reliability CMOS Technology
– Endurance: 10,000 Cycles
– Data Retention: 10 Years
JEDEC Approved Byte-wide Pinout
Industrial Temperature Ranges
Green (Pb/Halide-free) Packaging Option Only
256K (32K x 8)
Battery-Voltage
Parallel
EEPROMs
AT28BV256
1. Description
The AT28BV256 is a high-performance electrically erasable and programmable read-
only memory. Its 256K of memory is organized as 32,768 words by 8 bits. Manufac-
tured with Atmel’s advanced nonvolatile CMOS technology, the device offers access
times to 200 ns with power dissipation of just 54 mW. When the device is deselected,
the CMOS standby current is less than 200 μA.
The AT28BV256 is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 64-byte page register to allow
writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to
64 bytes of data are internally latched, freeing the address and data bus for other
operations. Following the initiation of a write cycle, the device will automatically write
the latched data using an internal control timer. The end of a write cycle can be
detected by Data polling of I/O7. Once the end of a write cycle has been detected a
new access for a read or write can begin.
Atmel’s AT28BV256 has additional features to ensure high quality and manufactura-
bility. The device utilizes internal error correction for extended endurance and
improved data retention characteristics. An optional software data protection mecha-
nism is available to guard against inadvertent writes. The device also includes an
extra 64 bytes of EEPROM for device identification or tracking.
0273K–PEEPR–2/09
相关PDF资料 |
PDF描述 |
|---|---|
| AT28BV64-30TI | IC EEPROM 64KBIT 300NS 28TSOP |
| AT28C010E-20TI | IC EEPROM 1MBIT 200NS 32TSOP |
| AT28C16E-15SC | IC EEPROM 16KBIT 150NS 24SOIC |
| AT28C17E-15SI | IC EEPROM 16KBIT 150NS 28SOIC |
| AT28C256E-15TI | IC EEPROM 256KBIT 150NS 28TSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28BV256-20SU SL383 | 制造商:Atmel Corporation 功能描述:EEPROM PARALLEL 256KBIT 32KX8 3.3V 28SOIC - Tape and Reel |
| AT28BV256-20SU-T | 功能描述:200NS, SOIC, IND TEMP, GREEN 制造商:microchip technology 系列:- 包装:剪切带（CT） 零件状态:在售 存储器类型:非易失 存储器格式:EEPROM 技术:EEPROM 存储容量:256Kb （32K x 8） 写周期时间 - 字，页:10ms 访问时间:200ns 存储器接口:并联 电压 - 电源:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:28-SOIC（0.295"，7.50mm 宽） 供应商器件封装:28-SOIC 标准包装:1 |
| AT28BV256-20TA | 功能描述:IC EEPROM 256KBIT 200NS 28TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT28BV256-20TC | 功能描述:电可擦除可编程只读存储器 256K 2.7V - 3.6V SDP-200NS COM TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28BV256-20TI | 功能描述:电可擦除可编程只读存储器 256K 2.7V - 3.6V SDP- 200NS IND TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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