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参数资料
| 型号： | AT28HC64B |
| 厂商： | Atmel Corp. |
| 元件分类： | DRAM |
| 英文描述： | 8K x 8 High Speed Parallel EEPROM with Page Write and Software Data Protection(8K x 8高速并行EEPROM带分页写数据保护和软件数据保护) |
| 中文描述： | 8K的× 8页的高速写入和软件数据保护并行的EEPROM（8K的× 8高速并行EEPROM的带分页写数据保护和软件数据保护） |
| 文件页数： | 1/14页 |
| 文件大小： | 324K |
| 代理商： | AT28HC64B |
1
Features
Fast Read Access Time – 55 ns
Automatic Page Write Operation
–
Internal Address and Data Latches for 64 Bytes
Fast Write Cycle Times
–
Page Write Cycle Time: 10 ms Maximum
–
1 to 64-byte Page Write Operation
Low Power Dissipation
–
40 mA Active Current
–
100
μA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling and Toggle Bit for End of Write Detection
High Reliability CMOS Technology
–
Endurance: 100,000 Cycles
–
Data Retention: 10 Years
Single 5V
±
10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Commercial and Industrial Temperature Ranges
Description
The AT28HC64B is a high-performance electrically erasable and programmable read
only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.
Manufactured with Atmel
’
s advanced nonvolatile CMOS technology, the device offers
access times to 55 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 100
μA.
Pin Configurations
64K (8K x 8)
High Speed
Parallel
EEPROM with
Page Write and
Software Data
Protection
AT28HC64B
Rev. 0274F
–
12/99
Pin Name
Function
A0 - A12
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
DC
Don
’
t Connect
TSOP
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
OE
A11
A9
A8
NC
WE
VCC
NC
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
PLCC
Top View
Note: PLCC package pins 1 and 17 are
DON
’
T CONNECT.
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
4
3
2
1
3
3
3
1
1
1
1
1
1
2
I
I
G
D
I
I
I
A
A
N
D
V
W
N
PDIP, SOIC
Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
(continued)
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| AT28LV010-20JI | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28HC64B-12JA | 功能描述:IC EEPROM 64KBIT 120NS 32PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT28HC64B-12JC | 功能描述:电可擦除可编程只读存储器 1M 5V SDP- 120NS COM TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28HC64B12JI | 制造商:ATMEL 功能描述:New |
| AT28HC64B-12JI | 功能描述:电可擦除可编程只读存储器 1M 5V SDP- 120NS IND TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28HC64B-12JI SL383 | 制造商:Atmel Corporation 功能描述:EEPROM Parallel 64K-Bit 8K x 8 5V 32-Pin PLCC T/R |
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