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参数资料
| 型号： | AT28HC64B |
| 厂商： | Atmel Corp. |
| 元件分类： | DRAM |
| 英文描述： | 8K x 8 High Speed Parallel EEPROM with Page Write and Software Data Protection(8K x 8高速并行EEPROM带分页写数据保护和软件数据保护) |
| 中文描述： | 8K的× 8页的高速写入和软件数据保护并行的EEPROM（8K的× 8高速并行EEPROM的带分页写数据保护和软件数据保护） |
| 文件页数： | 2/14页 |
| 文件大小： | 324K |
| 代理商： | AT28HC64B |
AT28HC64B
2
The AT28HC64B is accessed like a Static RAM for the
read or write cycle without the need for external compo-
nents. The device contains a 64-byte page register to allow
writing of up to 64 bytes simultaneously. During a write
cycle, the addresses and 1 to 64 bytes of data are internally
latched, freeing the address and data bus for other opera-
tions. Following the initiation of a write cycle, the device will
automatically write the latched data using an internal con-
trol timer. The end of a write cycle can be detected by
DATA Polling of I/O
7
. Once the end of a write cycle has
been detected, a new access for a read or write can begin.
Atmel
’
s AT28HC64B has additional features to ensure high
quality and manufacturability. The device utilizes internal
error correction for extended endurance and improved data
retention. An optional software data protection mechanism
is available to guard against inadvertent writes. The device
also includes an extra 64 bytes of EEPROM for device
identification or tracking.
Block Diagram
Absolute Maximum Ratings*
Temperature Under Bias................................ -55
°
C to +125
°
C
*NOTICE:
Stresses beyond those listed under
“
Absolute
Maximum Ratings
”
may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability
Storage Temperature..................................... -65
°
C to +150
°
C
All Input Voltages
(including NC Pins)
with Respect to Ground...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground.............................-0.6V to V
CC
+ 0.6V
Voltage on OE and A9
with Respect to Ground...................................-0.6V to +13.5V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AT28HC64B-12JA | 功能描述:IC EEPROM 64KBIT 120NS 32PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:378 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:8M（1M x 8，512K x 16） 速度:110ns 接口:并联 电源电压:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-CBGA 供应商设备封装:48-CBGA（7x7） 包装:托盘 |
| AT28HC64B-12JC | 功能描述:电可擦除可编程只读存储器 1M 5V SDP- 120NS COM TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28HC64B12JI | 制造商:ATMEL 功能描述:New |
| AT28HC64B-12JI | 功能描述:电可擦除可编程只读存储器 1M 5V SDP- 120NS IND TEMP RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| AT28HC64B-12JI SL383 | 制造商:Atmel Corporation 功能描述:EEPROM Parallel 64K-Bit 8K x 8 5V 32-Pin PLCC T/R |
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