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参数资料
| 型号： | AT45DB081B-TU |
| 厂商： | Atmel |
| 文件页数： | 2/33页 |
| 文件大小： | 0K |
| 描述： | IC FLASH 8MBIT 20MHZ 28TSOP |
| 标准包装： | 234 |
| 格式 - 存储器： | 闪存 |
| 存储器类型： | DataFLASH |
| 存储容量： | 8M（4096 页 x 264 字节） |
| 速度： | 20MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 2.7 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 28-TSSOP（0.465"，11.8mm 宽） |
| 供应商设备封装： | 28-TSOP |
| 包装： | 托盘 |
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EEPROM emulation (bit or byte alterability) is easily handled with a self-contained three
step Read-Modify-Write operation. Unlike conventional Flash memories that are
accessed randomly with multiple address lines and a parallel interface, the DataFlash
uses a SPI serial interface to sequentially access its data. DataFlash supports SPI mode
0 and mode 3. The simple serial interface facilitates hardware layout, increases system
reliability, minimizes switching noise, and reduces package size and active pin count.
The device is optimized for use in many commercial and industrial applications where
high density, low pin count, low voltage, and low power are essential. The device oper-
ates at clock frequencies up to 20 MHz with a typical active read current consumption of
4 mA.
To allow for simple in-system reprogrammability, the AT45DB081B does not require
high input voltages for programming. The device operates from a single power supply,
2.5V to 3.6V or 2.7V to 3.6V, for both the program and read operations. The
AT45DB081B is enabled through the chip select pin (CS) and accessed via a three-wire
interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock
(SCK).
All programming cycles are self-timed, and no separate erase cycle is required before
programming.
When the device is shipped from Atmel, the most significant page of the memory array
may not be erased. In other words, the contents of the last page may not be filled with
FFH.
Block Diagram
WP
PAGE (264 BYTES)
FLASH MEMORY ARRAY
SCK
CS
RESET
VCC
GND
BUFFER 1 (264 BYTES)
I/O INTERFACE
BUFFER 2 (264 BYTES)
RDY/BUSY
SI
SO
Memory Array
To provide optimal flexibility, the memory array of the AT45DB081B is divided into three
levels of granularity comprising of sectors, blocks, and pages. The Memory Architecture
Diagram illustrates the breakdown of each level and details the number of pages per
sector and block. All program operations to the DataFlash occur on a page-by-page
basis; however, the optional erase operations can be performed at the block or page
level.
2
AT45DB081B
2225J–DFLSH–2/08
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相关代理商/技术参数 |
参数描述 |
|---|---|
| AT45DB081D | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:8-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB081D_07 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:8-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB081D_08 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:8-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB081D_09 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:8-megabit 2.5-volt or 2.7-volt DataFlash |
| AT45DB081D_13 | 制造商:AD 制造商全称:Analog Devices 功能描述:8-megabit 2.5V or 2.7V DataFlash |
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