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参数资料
| 型号： | AT49BV040A |
| 厂商： | Atmel Corp. |
| 英文描述： | 4-megabit (512K x 8) Single 2.7-volt Battery-Voltage⑩ Flash Memory |
| 中文描述： | 4兆位（为512k × 8）单2.7伏电池电压⑩闪存 |
| 文件页数： | 2/17页 |
| 文件大小： | 182K |
| 代理商： | AT49BV040A |
2
AT49BV040A
3358A–FLASH–6/03
When the device is deselected, the CMOS standby current is less than 50 μA. To allow for
simple in-system reprogrammability, the AT49BV040A does not require high input voltages for
programming. Three-volt-only commands determine the read and programming operation of
the device. Reading data out of the device is similar to reading from an EPROM; it has stan-
dard CE, OE, and WE inputs to avoid bus contention. Reprogramming the AT49BV040A is
performed by erasing a block of data and then programming on a byte by byte basis. The byte
programming time is a fast 30
μ
s. The end of a program cycle can be optionally detected by
the DATA polling feature. Once the end of a byte program cycle has been detected, a new
access for a read or program can begin. The typical number of program and erase cycles is in
excess of 10,000 cycles.
The device is erased by executing the erase command sequence; the device internally con-
trols the erase operations. There are two 8K byte parameter block sections, eight main
memory blocks, and one boot block.
The device has the capability to protect the data in the boot block; this feature is enabled by a
command sequence. The 16K-byte boot block section includes a reprogramming lock out fea-
ture to provide data integrity. The boot sector is designed to contain user secure code, and
when the feature is enabled, the boot sector is permanently protected from being
reprogrammed.
Block Diagram
CONTROL
LOGIC
Y DECODER
PARAMETER
BLOCK 1
(8K BYTES)
BOOT BLOCK
(16K BYTES)
OE
WE
CE
RESET
ADDRESS
INPUTS
VCC
GND
AT49BV040A
DATA INPUTS/OUTPUTS
I/O7 - I/O0
8
X DECODER
PARAMETER
BLOCK 2
(8K BYTES)
MAIN MEMORY
BLOCK 1
(32K BYTES)
MAIN MEMORY
BLOCK 2
(64K BYTES)
MAIN MEMORY
BLOCK 3
(64K BYTES)
MAIN MEMORY
BLOCK 4
(64K BYTES)
MAIN MEMORY
BLOCK 8
(64K BYTES)
MAIN MEMORY
BLOCK 7
(64K BYTES)
MAIN MEMORY
BLOCK 6
(64K BYTES)
MAIN MEMORY
BLOCK 5
(64K BYTES)
PROGRAM
DATA LATCHES
Y-GATING
INPUT/OUTPUT
BUFFERS
10000
0FFFF
08000
07FFF
3FFFF
30000
2FFFF
1FFFF
06000
05FFF
04000
03FFF
00000
7FFFF
70000
6FFFF
60000
5FFFF
50000
4FFFF
40000
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| AT49LV040 | 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory(512K x 8单电源2.7V Battery-Voltage技术闪速存储器) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| AT49BV040A-70JI | 功能描述:IC FLASH 4MBIT 70NS 32PLCC RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
| AT49BV040A-70JU | 功能描述:IC FLASH 4MBIT 70NS 32PLCC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
| AT49BV040A-70JU SL383 | 功能描述:IC FLASH 4MBIT 70NS 32PLCC RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:RAM 存储器类型:SDRAM 存储容量:256M（8Mx32） 速度:143MHz 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:90-VFBGA 供应商设备封装:90-VFBGA（8x13） 包装:托盘 其它名称:Q2841869 |
| AT49BV040A-70JU-T | 功能描述:IC FLASH 4MBIT 70NS 32PLCC 制造商:microchip technology 系列:- 包装:带卷（TR） 零件状态:停產 存储器类型:非易失 存储器格式:闪存 技术:FLASH 存储容量:4Mb （512K x 8） 写周期时间 - 字，页:50μs 访问时间:70ns 存储器接口:并联 电压 - 电源:2.7 V ~ 3.6 V 工作温度:-40°C ~ 85°C（TC） 安装类型:表面贴装 封装/外壳:32-LCC（J 形引线） 供应商器件封装:32-PLCC 基本零件编号:AT49BV040 标准包装:750 |
| AT49BV040A-70TI | 功能描述:IC FLASH 4MBIT 70NS 32TSOP RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:96 系列:- 格式 - 存储器:闪存 存储器类型:FLASH 存储容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并联 电源电压:2.65 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:48-TFSOP（0.724"，18.40mm 宽） 供应商设备封装:48-TSOP 包装:托盘 |
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