参数资料
型号: AT89C51CC03
厂商: Atmel, Corp.
元件分类: 8位微控制器
英文描述: Enhanced 8-bit MCU with CAN Controller and Flash Memory
中文描述: 增强型8位微控制器带CAN控制器和闪存
文件页数: 13/24页
文件大小: 1379K
代理商: AT89C51CC03
AT89C51RD2 / AT89C51ED2 QualPack
The best fit coefficients in the regression analysis are:
T0= 14.25034317 LN-sec
Ea= 1.060043152 eV
GAMMA= -3.2454227 LN-sec-cm/MV
SIGMA= 0.414655753 LN-sec
with an adjusted r-squared of 97.99%. The intrinsic lifetime at use conditions calculated from this regression is
56174 years.
Conclusion:
Using the coefficients determined above, the time to reach any cumulative percent failure level can be estimated
given the stress conditions. Using 105C and 3.3 volts on 63 Angstrom N-Channel gate2 oxide, we may expect
0.01% of capacitors having 6,267 square microns area with 6,174 microns of active edge to fail in about 613 years,
exceeding the technology requirement of ten years.
Test results :
AT56.8K Active Edge TDDB 225C
Rev. 0 – 2003 July
13
-2,00000E+00
-1,00000E+00
0,00000E+00
1,00000E+00
2,00000E+00
1,00
E+00
1,00
E+01
1,00
E+02
1,00
E+03
1,00
E+04
1,00
E+05
Tbd (sec)
AT56.8K Active Edge TDDB 200C
-2,00000E+00
-1,00000E+00
0,00000E+00
1,00000E+00
2,00000E+00
1,00
E+00
1,00
E+01
1,00
E+02
1,00
E+03
1,00
E+04
1,00
E+05
Tbd (sec)
AT56.8K Active Edge TDDB 175C
-2,00000E+00
-1,00000E+00
0,00000E+00
1,00000E+00
2,00000E+00
1,00
E+00
1,00
E+01
1,00
E+02
1,00
E+03
1,00
E+04
1,00
E+05
Tbd (sec)
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