参数资料
型号: AT89C51CC03
厂商: Atmel, Corp.
元件分类: 8位微控制器
英文描述: Enhanced 8-bit MCU with CAN Controller and Flash Memory
中文描述: 增强型8位微控制器带CAN控制器和闪存
文件页数: 16/24页
文件大小: 1379K
代理商: AT89C51CC03
AT89C51RD2 / AT89C51ED2 QualPack
4.3.4.3 Cell Read Disturb
Purpose:
To measure read disturb influence on 56k8 memory cell.
Test parameters:
Lot:
0t0348
Programming: 14V on WL and sensegate @5ms
Temperature: 25°C and 140°C
The cell is stressed with BL voltage much higher than standard read conditions (around 6V) to accelerate disturb
phenomenon : electrons from the Floating gate can move through the tunnel oxide. This charge loss is measured
after stress by a Vt measurement.
Test results:
0t0348 #01 56.8k (568A6)
BL read disturb @25C
16 Rev. 0 – 2003 July
Conclusion:
Extrapolation to 10 years lifetime give a maximum BL voltage of around 4V in read operation, which is much higher
than nominal BL read voltage (~1V). So there is no sensitivity to read disturb either at room temperature or high
temperature.
0t0348 #01 56.8k (568A6)
BL read disturb @140C
0
0.5
1
1.5
2
2.5
0.1
1
10
100
1000
10000
Time (s)
D
Vbl=6V
Vbl=6.5V
Vbl=7V
Vbl=7.5V
Vbl=8V
0
0.5
1
1.5
2
2.5
0.1
1
10
100
1000
10000
Time (s)
D
Vbl=6V
Vbl=6.5V
Vbl=7V
Vbl=7.5V
Vbl=8V
相关PDF资料
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