参数资料
型号: AT89C51CC03
厂商: Atmel, Corp.
元件分类: 8位微控制器
英文描述: Enhanced 8-bit MCU with CAN Controller and Flash Memory
中文描述: 增强型8位微控制器带CAN控制器和闪存
文件页数: 14/24页
文件大小: 1379K
代理商: AT89C51CC03
AT89C51RD2 / AT89C51ED2 QualPack
14 Rev. 0 – 2003 July
4.3.4 FLASH Characteristics
4.3.4.1 Cell endurance
Purpose:
To evaluate the ability of memory cell to withstand high number of program/erase cycles without change of
electrical characteristics.
Test Parameters:
Measurements have been done on lot 0R5414.
Test done on 2 cells in a byte :
-
cell near byte select transistor, called bit0 (1
st
column)
-
cell near Vss contact, called bit 7 (8
column).
Cycling is done for various programming voltages :
- write :
13.5V on BL / 15.6V on select - clear : 13.5V on sense / 15.6V on select
@5ms
14.5V on BL / 16.6V on select @5ms 14.5V on sense / 16.6V on select
15.5V on BL / 17.6V on select
15.5V on sense / 17.6V on select
16.5V on BL / 17.6V on select
16.5V on sense / 17.6V on select
MP044 0R5414 #01
Vsel=Vbl+2.1 Bit 0 (near byte sel)
-2.5
-2
-1.5
-1
-0.5
0
1
10
100
1000
10000
100000
# cycles
V
13.5V
14.5V
15.5V
16.5V
MP044 0R5414 #01
Vsel=Vbl+2.1 Bit 7 (near Vss)
-2.5
-2
-1.5
-1
-0.5
0
1
10
100
1000
10000
100000
# cycles
V
13.5V
14.5V
15.5V
16.5V
MP044 0R5414 #01
Vsel=Vsen+2.1 Bit 0 (near byte sel)
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
1
10
100
1000
10000
100000
# cycles
V
13.5V
14.5V
15.5V
16.5V
MP044 0R5414 #01
Vsel=Vsen+2.1 Bit 7 (near Vss)
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
1
10
100
1000
10000
100000
# cycles
V
13.5V
14.5V
15.5V
16.5V
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