参数资料
型号: AT91SAM7S32B-MU-999
厂商: Atmel
文件页数: 36/165页
文件大小: 0K
描述: IC MCU ARM7 32KB FLASH 48-VQFN
产品培训模块: MCU Product Line Introduction
标准包装: 3,500
系列: SAM7S
核心处理器: ARM7
芯体尺寸: 16/32-位
速度: 55MHz
连通性: I²C,SPI,SSC,UART/USART
外围设备: 欠压检测/复位,DMA,POR,PWM,WDT
输入/输出数: 21
程序存储器容量: 32KB(32K x 8)
程序存储器类型: 闪存
RAM 容量: 8K x 8
电压 - 电源 (Vcc/Vdd): 1.65 V ~ 1.95 V
数据转换器: A/D 8x10b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 48-VFQFN 裸露焊盘
包装: 带卷 (TR)
配用: AT91SAM-ICE-ND - EMULATOR FOR AT91 ARM7/ARM9
AT91SAM7S-EK-ND - KIT EVAL FOR ARM AT91SAM7S
130
SAM7S Series [DATASHEET]
6175M–ATARM–26-Oct-12
20.2.5
Device Operations
Several commands on the Flash memory are available. These commands are summarized in Table 20-3 on page
126. Each command is driven by the programmer through the parallel interface running several read/write hand-
shaking sequences.
When a new command is executed, the previous one is automatically achieved. Thus, chaining a read command
after a write automatically flushes the load buffer in the Flash.
In the following tables, 21-6 through 21-18
DATA[15:0] pertains to SAM7S512/256/128/64/321/161
DATA[7:0] pertains to SAM7S32/16
20.2.5.1
Flash Read Command
This command is used to read the contents of the Flash memory. The read command can start at any valid
address in the memory plane and is optimized for consecutive reads. Read handshaking can be chained; an inter-
nal address buffer is automatically increased.
Table 20-6.
Read Command
Step
Handshake Sequence
MODE[3:0]
DATA[15:0]
1
Write handshaking
CMDE
READ
2
Write handshaking
ADDR0
Memory Address LSB
3
Write handshaking
ADDR1
Memory Address
4
Read handshaking
DATA
*Memory Address++
5
Read handshaking
DATA
*Memory Address++
...
n
Write handshaking
ADDR0
Memory Address LSB
n+1
Write handshaking
ADDR1
Memory Address
n+2
Read handshaking
DATA
*Memory Address++
n+3
Read handshaking
DATA
*Memory Address++
...
Table 20-7.
Read Command
Step
Handshake Sequence
MODE[3:0]
DATA[7:0]
1
Write handshaking
CMDE
READ
2
Write handshaking
ADDR0
Memory Address LSB
3
Write handshaking
ADDR1
Memory Address
4
Write handshaking
ADDR2
Memory Address
5
Write handshaking
ADDR3
Memory Address
6
Read handshaking
DATA
*Memory Address++
7
Read handshaking
DATA
*Memory Address++
...
n
Write handshaking
ADDR0
Memory Address LSB
n+1
Write handshaking
ADDR1
Memory Address
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