参数资料
型号: ATA6823C-PHQW
厂商: Atmel
文件页数: 22/27页
文件大小: 0K
描述: IC MOTOR DVR H-BRIDGE 32QFN
标准包装: 4,000
应用: H 桥,PWM 电机控制器
评估套件: 可供
输出数: 1
电流 - 输出: 100mA
电压 - 负载: 7 V ~ 21.2 V
电源电压: 7 V ~ 21.2 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 32-VQFN 裸露焊盘
供应商设备封装: 32-QFN(7x7)
包装: 带卷 (TR)
其它名称: ATA6823C-PHQW-ND
8.
Electrical Characteristics (Continued)
All parameters given are valid for V THUV ≤ V VBAT ≤ V THOV and for –40°C ≤ ? ambient ≤ 125°C unless stated otherwise.
No.
7.10
7.11
Parameters
Output peak current at pins
Hx, switched to HIGH
Static switch output low
voltage at pins Hx and Lx
Test Conditions
V VBAT = 13.5V
V Sx = V VBAT
V Hx = V VBAT + 3V
V Sx = 0V
I Hx = 1mA
I Lx = 1mA
Pin
18, 20
18, 20,
26, 27
Symbol
I HxH,
x = 1, 2
V HxL , V LxL
x = 1, 2
Min.
Typ.
Max.
–100
0.3
Unit
mA
V
Type*
A
A
Static high-side switch
7.12 output high-voltage pins
H1, H2
I Lx = –10μA
(PWM = static)
18, 20
V HxHstat1(7)
V VBAT +
V VG – 1
V VBAT +
V VG
V
A
7.13
Sink resistance between
Hx and Sx
V VBAT = V PBAT = 9V,
I_VG = –20mA
17, 18,
19, 20
R PDHx
30
150
k Ω
A
Dynamic Parameters
Propagation delay time,
7.15 low-side driver from high to
low
Figure 3-6 on page 12
V VBAT = 13.5V
26, 27
t LxHL
0.5
μs
A
Propagation delay time,
7.16 low-side driver from low to V VBAT = 13.5V
high
26, 27
t LxLH
0.5 + t CC
μs
A
7.17 Fall time low-side driver
7.18 Rise time low-side driver
Propagation delay time,
7.19 high-side driver from high
to low
V VBAT = 13.5V
C Gx = 5nF
V VBAT = 13.5V
Figure 3-6 on page 12
V VBAT = 13.5V
26, 27
26, 27
18, 20
t Lxf
t Lxr
t HxHL
0.5
0.5
0.5
μs
μs
μs
A
A
A
Propagation delay time,
7.20 high-side driver from low to V VBAT = 13.5V
high
18, 20
t HxLH
0.5 + t CC
μs
A
7.21 Fall time high-side driver
7.22 Rise time high-side driver
V VBAT = 13.5V,
C Gx = 5nF
V VBAT = 13.5V
18, 20
18, 20
t Hxf
t Hxr
0.5
0.5
μs
μs
A
A
7.23 Cross conduction time
R CC = 10k Ω , C CC = 1nF(8)
4
t CC
3.75
4.45
μs
A
7.24 External resistor
7.25 External capacitor
4
4
R CC
C CC
5
5
k Ω
nF
D
D
7.26
R ON of t CC switching
transistor
4
R ONCC
200
Ω
A
* Type: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
EN, DIR, PWM = high
The use of X7R material is recommended
For higher values, stability at zero load is not guaranteed
Tested during qualification only
Value depends on T OSC ; function tested with digital test pattern
Tested during characterization only
Supplied by charge pump
See section “Cross Conduction Time”
Voltage between source-drain of external switching transistors in active case
10. The short-circuit message will never be generated for switch-on time < t sc
Atmel ATA6823C [DATASHEET]
9209E–AUTO–03/12
22
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