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参数资料
| 型号： | ATF-33143-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 12/18页 |
| 文件大小： | 154K |
| 代理商： | ATF-33143-TR1 |
3
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measure-
ments. This circuit represents a trade-off between an optimal noise match and a realizable match based on production test
requirements. Circuit losses have been de-embedded from actual measurements.
Input
50 Ohm
Transmission
Line Including
Gate Bias T
(0.5 dB loss)
Input
Matching Circuit
Γ_mag = 0.20
Γ_ang = 124°
(0.3 dB loss)
DUT
50 Ohm
Transmission
Line Including
Drain Bias T
(0.5 dB loss)
Output
ATF-33143 DC Electrical Specifications
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameters and Test Conditions
Units
Min. Typ.[2]
Max.
Idss[1]
Saturated Drain Current
VDS = 1.5 V, VGS = 0 V
mA
175
237
305
VP[1]
Pinchoff Voltage
VDS = 1.5 V, IDS = 10% of Idss
V
-0.65
-0.5
- 0.35
Id
Quiescent Bias Current
VGS = -0.5 V, VDS = 4 V
mA
—
80
—
gm[1]
Transconductance
VDS = 1.5 V, gm = Idss/VP mmho 360
440
—
IGDO
Gate to Drain Leakage Current
VGD = 5 V
A
1000
Igss
Gate Leakage Current
VGD = VGS = -4 V
A
—
42
600
f = 2 GHz
VDS = 4 V, IDS = 80 mA
dB
0.5
0.8
NF
Noise Figure
VDS = 4 V, IDS = 60 mA
0.5
f = 900 MHz
VDS = 4 V, IDS = 80 mA
dB
0.4
VDS = 4 V, IDS = 60 mA
0.4
f = 2 GHz
VDS = 4 V, IDS = 80 mA
dB
13.5
15
16.5
Ga
Associated Gain[3]
VDS = 4 V, IDS = 60 mA
15
f = 900 MHz
VDS = 4 V, IDS = 80 mA
dB
21
VDS = 4 V, IDS = 60 mA
21
Output 3rd Order
f = 2 GHz
VDS = 4 V, IDS = 80 mA
dBm
30
33.5
OIP3
Intercept Point[3]
5 dBm Pout/Tone
VDS = 4 V, IDS = 60 mA
32
f = 900 MHz
VDS = 4 V, IDS = 80 mA
dBm
32.5
5 dBm Pout/Tone
VDS = 4 V, IDS = 60 mA
31
1 dB Compressed
f = 2 GHz
VDS = 4 V, IDS = 80 mA
dBm
22
P1dB
Compressed Power[3]
VDS = 4 V, IDS = 60 mA
21
f = 900 MHz
VDS = 4 V, IDS = 80 mA
dBm
21
VDS = 4 V, IDS = 60 mA
20
Notes:
1. Guaranteed at wafer probe level.
2. Typical value determined from a sample size of 450 parts from 9 wafers.
3. Measurements obtained using production test board described in Figure 5.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-33143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-33143-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-33143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF331M4 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-331M4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PHEMT Low Noise +31 dBm OIP3 in MiniPak |
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