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参数资料
| 型号： | ATF-33143-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 6/18页 |
| 文件大小： | 154K |
| 代理商： | ATF-33143-TR1 |
14
Noise Parameter Applications
Information
Fmin values at 2 GHz and higher
are based on measurements while
the Fmins below 2 GHz have been
extrapolated. The Fmin values are
based on a set of 16 noise figure
measurements made at 16
different impedances using an
ATN NP5 test system. From these
measurements, a true Fmin is
calculated. Fmin represents the
true minimum noise figure of the
device when the device is pre-
sented with an impedance
matching network that trans-
forms the source impedance,
typically 50
, to an impedance
represented by the reflection
coefficient
Γ
o. The designer must
design a matching network that
will present
Γ
o to the device with
minimal associated circuit losses.
The noise figure of the completed
amplifier is equal to the noise
figure of the device plus the
losses of the matching network
preceding the device. The noise
figure of the device is equal to
Fmin only when the device is
presented with
Γo. If the reflec-
tion coefficient of the matching
network is other than
Γo, then the
noise figure of the device will be
greater than Fmin based on the
following equation.
NF = Fmin + 4 Rn
|
Γs – Γo | 2
Zo
(|1 +
Γo|2)(1 –Γs|2)
Where Rn/Zo is the normalized
noise resistance,
Γ
o is the opti-
mum reflection coefficient
required to produce Fmin and Γs is
the reflection coefficient of the
source impedance actually
presented to the device. The
losses of the matching networks
are non-zero and they will also
add to the noise figure of the
device creating a higher amplifier
noise figure. The losses of the
matching networks are related to
the Q of the components and
associated printed circuit board
loss.
Γ
o is typically fairly low at
higher frequencies and increases
as frequency is lowered. Larger
gate width devices will typically
have a lower
Γ
o as compared to
narrower gate width devices.
Typically for FETs, the higher
Γo
usually infers that an impedance
much higher than 50
is required
for the device to produce Fmin. At
VHF frequencies and even lower
L Band frequencies, the required
impedance can be in the vicinity
of several thousand ohms.
Matching to such a high imped-
ance requires very hi-Q compo-
nents in order to minimize circuit
losses. As an example at 900 MHz,
when airwwound coils (Q > 100)
are used for matching networks,
the loss can still be up to 0.25 dB
which will add directly to the
noise figure of the device. Using
muiltilayer molded inductors with
Qs in the 30 to 50 range results in
additional loss over the airwound
coil. Losses as high as 0.5 dB or
greater add to the typical 0.15 dB
Fmin of the device creating an
amplifier noise figure of nearly
0.65 dB. A discussion concerning
calculated and measured circuit
losses and their effect on ampli-
fier noise figure is covered in
Avago Application 1085.
Reliability Data
Nominal Failures per million (FPM)
90% confidence Failures per million (FPM)
for different durations
Channel
(FITs)
1 year
5 year
10 year
30 year
(FITs)
1 year
5 year
10 year
30 year
Temperature
1000
(oC)
hours
100
<0.1
125
<0.1
11
140
<0.1
160
<0.1
6
160
9.3K
150
<0.1
2
140
26K
<0.1
0.3
780
8800
131K
160
<0.1
920
21K
370K
<0.1
67
24K
120K
520K
180
<0.1
4400
450K
830K
1000K
21
53K
590K
850K
1000K
NOT
recommended
Predicted failures with temperature extrapolated from failure distribution and activation energy data of
higher temperature operational life STRIFE of PHEMT process
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-33143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-33143-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-33143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF331M4 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-331M4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PHEMT Low Noise +31 dBm OIP3 in MiniPak |
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