- 您现在的位置：买卖IC网 > PDF目录67389 > ATF-33143-TR1 X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET PDF资料下载
参数资料
| 型号： | ATF-33143-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 13/18页 |
| 文件大小： | 154K |
| 代理商： | ATF-33143-TR1 |
4
ATF-33143 Typical Performance Curves
Notes:
1. Measurements made on a fixed tuned production test board that was tuned for optimal gain match with reasonable noise figure at 4V 80 mA bias. This
circuit represents a trade-off between optimal noise match, maximum gain match and a realizable match based on production test board requirements.
Circuit losses have been de-embedded from actual measurements.
2. Quiescent drain current, IDSQ, is set with zero RF drive applied. As P1dB is approached, the drain current may increase or decrease depending on
frequency and dc bias point. At lower values of IDSQ the device is running closer to class B as power output approaches P1dB. This results in higher P1dB
and higher PAE (power added efficiency) when compared to a device that is driven by a constant current source as is typically done with active biasing.
Figure 8. P1dB vs. Bias [1,2] at 2 GHz.
Figure 9. P1dB vs. Bias [1,2] Tuned for NF
@ 4V, 80 mA at 900 MHz.
Figure 10. NF and Ga vs. Bias [1] at
2 GHz.
Figure 11. NF and Ga vs. Bias [1] at
900 MHz.
IDSQ (mA)
Figure 6. OIP3, IIP3 vs. Bias [1] at
2 GHz.
OIP3,
IIP3
(dBm)
0
120
40
30
20
10
0
40
20
100
80
60
2 V
3 V
4 V
IDSQ (mA)
Figure 7. OIP3, IIP3 vs. Bias [1] at
900 MHz.
OIP3,
IIP3
(dBm)
40
30
20
10
0
2 V
3 V
4 V
0
120
40
20
100
80
60
IDSQ (mA)
P
1dB
(dBm)
25
20
15
10
5
0
2 V
3 V
4 V
0
120
40
20
80
100
60
NF
Ga
IDSQ (mA)
G
a
(dB)
16
15
14
13
12
11
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
NOISE
FIGURE
(dB)
2 V
3 V
4 V
0
120
40
20
80
100
60
IDSQ (mA)
G
a
(dB)
22
21
20
19
18
17
16
1.2
1.0
0.8
0.6
0.4
0.2
0
NOISE
FIGURE
(dB)
2 V
3 V
4 V
NF
Ga
0
120
40
20
80
100
60
IDSQ (mA)
P
1dB
(dBm)
25
20
15
10
5
0
2 V
3 V
4 V
0
120
40
20
80
100
60
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-50189 | 0 MHz - 2400 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| ATS535SSB | PROXIMITY SENSOR-HALL EFFECT, 65-95mA, ROUND, THROUGH HOLE MOUNT |
| ATS535JSB | PROXIMITY SENSOR-HALL EFFECT, 65-95mA, ROUND, THROUGH HOLE MOUNT |
| ATS611LSB | PROXIMITY SENSOR-HALL EFFECT, 0.5-2.5mm, 0.40V, ROUND, THROUGH HOLE MOUNT |
| ATS660LSB | PROXIMITY SENSOR-HALL EFFECT, 0.5-2.5mm, 0.40V, ROUND, THROUGH HOLE MOUNT |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-33143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-33143-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-33143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Low Noise RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF331M4 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Agilent ATF-331M4 Low Noise Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-331M4 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:PHEMT Low Noise +31 dBm OIP3 in MiniPak |
发布紧急采购，3分钟左右您将得到回复。