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参数资料
型号： ATF-50189-BLK
元件分类： 小信号晶体管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封装： LEAD FREE PACKAGE-3
文件页数： 3/21页
文件大小： 350K
代理商： ATF-50189-BLK
11
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
ATF-50189 Typical Scattering Parameters at 25
°C, VDS = 4.5V, IDS = 280 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.923
-133.2
31.0
35.531
110.9
-37.7
0.013
31.7
0.692
-163.7
34.4
0.2
0.919
-158.7
25.6
19.023
97.1
-37.1
0.014
25.2
0.738
-173.2
31.3
0.3
0.919
-169.4
22.2
12.872
90.4
-36.5
0.015
24.9
0.749
-177.6
29.3
0.4
0.917
-176.1
19.7
9.705
85.7
-35.9
0.016
26.3
0.752
179.3
27.8
0.5
0.916
178.5
17.7
7.687
84.4
-35.4
0.017
30.4
0.756
175.7
26.6
0.6
0.916
174.5
16.2
6.438
81.7
-34.9
0.018
32.6
0.755
173.5
25.5
0.7
0.917
170.9
14.9
5.582
79.2
-34.4
0.019
34.5
0.755
171.4
24.7
0.8
0.918
167.5
13.9
4.939
76.5
-33.6
0.021
35.9
0.753
169.4
23.7
0.9
0.920
164.1
12.9
4.433
73.8
-33.2
0.022
36.8
0.755
167.5
23.0
1.0
0.921
161.0
12.1
4.026
70.9
-32.4
0.024
37.1
0.753
165.6
22.2
1.1
0.922
159.6
11.7
3.853
69.5
-32.0
0.025
37.1
0.753
164.7
21.9
1.2
0.922
158.1
11.3
3.679
68.1
-32.0
0.025
37.1
0.753
163.7
21.7
1.3
0.922
155.4
10.6
3.378
65.2
-31.4
0.027
36.7
0.751
162.0
21.0
1.4
0.919
152.6
9.9
3.127
62.3
-31.1
0.028
36.3
0.753
160.2
20.3
1.5
0.918
150.2
9.3
2.910
59.6
-30.5
0.030
35.8
0.753
158.4
19.2
1.6
0.920
147.5
8.7
2.717
56.7
-30.2
0.031
35.0
0.753
156.7
18.5
1.7
0.919
144.6
8.1
2.547
53.9
-29.6
0.033
34.1
0.753
154.9
17.8
1.8
0.920
142.0
7.6
2.392
51.2
-29.4
0.034
33.2
0.753
153.3
17.2
1.9
0.918
139.6
7.0
2.251
48.6
-29.1
0.035
32.1
0.752
151.7
16.5
2.0
0.919
137.1
6.5
2.123
45.9
-28.6
0.037
31.0
0.752
150.1
16.0
2.1
0.917
134.6
6.1
2.009
43.3
-28.4
0.038
29.7
0.752
148.3
15.4
2.2
0.918
132.0
5.6
1.908
40.6
-28.2
0.039
28.6
0.752
146.8
15.0
2.3
0.915
129.8
5.1
1.800
37.9
-28.0
0.040
27.4
0.755
145.2
14.4
2.4
0.912
127.1
4.7
1.721
35.6
-27.7
0.041
26.0
0.750
143.9
13.9
2.5
0.908
124.9
4.3
1.647
33.4
-27.3
0.043
25.0
0.768
142.3
13.4
3
0.908
112.7
2.3
1.304
21.1
-26.6
0.047
18.3
0.766
135.5
11.5
3.5
0.912
99.5
0.5
1.062
11.3
-26.0
0.050
12.6
0.773
131.8
10.0
4
0.923
92.6
-0.7
0.921
1.5
-25.8
0.051
7.1
0.779
123.3
9.4
5
0.922
78.2
-3.5
0.669
-19.8
-25.2
0.055
-5.3
0.793
102.9
7.0
6
0.921
61.3
-5.8
0.515
-41.5
-25.7
0.052
-22.4
0.806
84.7
5.2
7
0.921
41.2
-8.2
0.389
-59.6
-26.0
0.050
-39.5
0.809
69.9
3.2
8
0.922
24.3
-10.2
0.308
-79.9
-26.7
0.046
-55.9
0.844
54.6
2.1
9
0.923
11.8
-12.4
0.239
-100.5
-28.4
0.038
-73.5
0.882
37.0
1.4
10
0.922
10.8
-14.6
0.187
-109.4
-31.1
0.028
-81.6
0.896
27.1
0.1
11
0.921
0.3
-16.0
0.158
-124.9
-34.4
0.019
-108.3
0.872
20.3
-1.8
12
0.924
-8.0
-17.7
0.131
-138.0
-46.0
0.005
-147.3
0.916
7.0
-1.3
13
0.923
-12.1
-19.2
0.110
-153.4
-40.0
0.010
71.0
0.877
-1.1
-4.4
14
0.922
-20.6
-21.0
0.089
-168.9
-37.1
0.014
30.2
0.882
-7.5
-6.3
15
0.925
-23.6
-21.4
0.085
177.8
-39.2
0.011
-4.9
0.865
-19.2
-7.2
16
0.925
-23.1
-21.1
0.088
165.9
-37.7
0.013
-8.8
0.864
-26.2
-6.9
17
0.924
-24.3
-18.9
0.114
155.2
-41.9
0.008
-173.5
0.856
-33.6
-4.7
18
0.924
-32.5
-17.1
0.140
133.4
-35.4
0.017
161.7
0.835
-42.5
-3.2
Figure 31. MSG/MAG & |S21|
2 vs Frequency
at 4.5V/280 mA.
FREQUENCY (GHz)
MSG/MAG
&
|S21|
2
(dB)
018
2
4
6
8
10
12
14
16
40
30
20
10
0
-10
-20
-30
MSG
MAG
S21
相关PDF资料
PDF描述
ATF-50189-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-50189-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-50189-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-50189-BLKG C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-50189-TR1G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相关代理商/技术参数
参数描述
ATF-50189-TR1 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF-50189-TR2 功能描述:射频GaAs晶体管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF501P8 制造商:AGILENT 制造商全称:AGILENT 功能描述:Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
ATF-501P8 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK
ATF-501P8-BLK 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
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