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参数资料
型号： ATF-50189-BLK
元件分类： 小信号晶体管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
封装： LEAD FREE PACKAGE-3
文件页数： 8/21页
文件大小： 350K
代理商： ATF-50189-BLK
16
Notes:
1. S parameter is measured on a microstrip line
made on 0.025 inch thick alumina carrier. The
input reference plane is at the end of the gate
lead. The output reference plane is at the end
of the drain lead.
Figure 36. MSG/MAG & |S21|
2 vs Frequency
at 5.5V/360 mA.
FREQUENCY (GHz)
MSG/MAG
&
|S21|
2
(dB)
018
2
4
6
8
10
12
14
16
40
30
20
10
0
-10
-20
-30
MSG
MAG
S21
ATF-50189 Typical Scattering Parameters at 25
°C, VDS = 5.5V, IDS = 360 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.874
-133.9
31.3
36.688
112.8
-39.2
0.011
32.1
0.639
-161.7
35.2
0.2
0.902
-159.0
26.0
19.973
98.3
-37.7
0.013
25.5
0.688
-172
31.9
0.3
0.910
-169.6
22.7
13.575
91.1
-37.1
0.014
24.9
0.699
-176.7
29.9
0.4
0.911
-176.2
20.2
10.251
86.1
-36.5
0.015
26.2
0.702
-179.9
28.3
0.5
0.911
178.4
18.2
8.123
84.4
-35.9
0.016
30.0
0.706
176.1
27.1
0.6
0.912
174.4
16.7
6.810
81.6
-35.4
0.017
32.1
0.706
173.7
26.0
0.7
0.914
170.8
15.4
5.902
78.8
-34.9
0.018
34.0
0.705
171.5
25.2
0.8
0.916
167.4
14.4
5.218
76.0
-34.4
0.019
35.3
0.702
169.6
24.4
0.9
0.916
164.0
13.4
4.686
73.0
-33.6
0.021
36.2
0.705
167.6
23.5
1
0.917
160.9
12.6
4.247
70.1
-33.2
0.022
36.6
0.702
165.7
22.9
1.1
0.919
159.5
12.2
4.064
68.6
-33.0
0.0225
36.6
0.702
164.7
22.6
1.2
0.920
158.0
11.8
3.881
67.1
-32.8
0.023
36.5
0.702
163.7
22.3
1.3
0.919
155.3
11.0
3.562
64.1
-32.0
0.025
36.3
0.700
162.1
21.2
1.4
0.915
152.4
10.4
3.296
61.0
-31.7
0.026
35.8
0.703
160.3
19.7
1.5
0.916
150.0
9.7
3.064
58.3
-31.4
0.027
35.5
0.702
158.5
19.0
1.6
0.918
147.4
9.1
2.861
55.2
-30.8
0.029
34.8
0.702
156.7
18.5
1.7
0.918
144.5
8.6
2.684
52.2
-30.5
0.03
33.9
0.702
155.0
17.9
1.8
0.918
141.9
8.0
2.517
49.5
-30.2
0.031
33.0
0.703
153.4
17.3
1.9
0.917
139.4
7.5
2.368
46.7
-29.6
0.033
32.0
0.703
151.8
16.7
2
0.918
136.9
7.0
2.229
43.9
-29.4
0.034
30.9
0.703
150.2
16.2
2.1
0.916
134.4
6.5
2.110
41.2
-29.1
0.035
29.7
0.705
148.5
15.6
2.2
0.917
131.8
6.0
2.003
38.4
-28.9
0.036
28.6
0.704
146.9
15.2
2.3
0.913
129.6
5.5
1.89
35.6
-28.6
0.037
27.3
0.702
145.6
14.5
2.4
0.911
126.9
5.1
1.802
33.2
-28.4
0.038
26.1
0.703
144.2
14.0
2.5
0.907
124.8
4.7
1.724
30.8
-28.2
0.039
25.1
0.722
142.6
13.6
3
0.907
112.5
2.7
1.360
18.0
-27.3
0.043
18.7
0.724
135.9
11.7
3.5
0.912
99.5
1.5
1.192
7.1
-26.9
0.045
11.0
0.742
127.8
10.8
4
0.923
92.6
0.5
1.054
-3.7
-26.6
0.047
3.0
0.761
118.9
10.5
5
0.922
78.2
-2.2
0.777
-25.4
-26.2
0.049
-11.9
0.799
101.3
8.6
6
0.921
61.3
-5.7
0.520
-47.3
-26.6
0.047
-25.5
0.828
84.3
5.9
7
0.921
41.2
-8.2
0.388
-66.0
-26.7
0.046
-39.2
0.846
68.3
3.9
8
0.922
24.3
-10.3
0.304
-86.5
-27.3
0.043
-54.0
0.863
52.3
2.5
9
0.923
11.8
-12.7
0.233
-108.9
-29.1
0.035
-71.3
0.877
37.6
1.2
10
0.922
10.8
-14.8
0.181
-117.8
-31.7
0.026
-78.2
0.894
28.0
-0.2
11
0.921
0.3
-16.1
0.156
-134.7
-34.9
0.018
-106.9
0.874
21.3
-1.7
12
0.924
-8.0
-18.1
0.125
-147.8
-48.0
0.004
-144.3
0.919
8.2
-1.6
13
0.923
-12.1
-19.7
0.104
-165.7
-40.0
0.01
74.2
0.878
0.1
-4.9
14
0.922
-20.6
-21.9
0.080
178.6
-37.1
0.014
30.8
0.881
-6.4
-7.3
15
0.925
-23.6
-22.3
0.077
167.6
-40.0
0.01
-3.8
0.864
-17.9
-8.0
16
0.925
-23.1
-22.3
0.077
155.5
-38.4
0.012
-13.4
0.861
-25.0
-8.2
17
0.924
-24.3
-19.5
0.106
148.1
-39.2
0.011
-177.4
0.854
-32.2
-5.3
18
0.924
-32.5
-17.6
0.132
130.3
-33.6
0.021
165.0
0.832
-41.4
-3.7
相关PDF资料
PDF描述
ATF-50189-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229
ATF-50189-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-50189-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-50189-BLKG C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-50189-TR1G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相关代理商/技术参数
参数描述
ATF-50189-TR1 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF-50189-TR2 功能描述:射频GaAs晶体管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF501P8 制造商:AGILENT 制造商全称:AGILENT 功能描述:Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package
ATF-501P8 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK
ATF-501P8-BLK 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
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