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参数资料
| 型号： | ATF-50189-TR1 |
| 厂商： | AGILENT TECHNOLOGIES INC |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | SOT-89, 3 PIN |
| 文件页数： | 16/21页 |
| 文件大小： | 165K |
| 代理商： | ATF-50189-TR1 |
4
Gamma Load and Source at Optimum OIP3 and P1dB Tuning Conditions
The device’s optimum OIP3 and P1dB measurements were determined using a load pull system at 4.5V,
280 mA quiesent bias.
Typical Gammas at Optimum OIP3[1]
Optimum OIP3
Freq
Gamma Source
Gamma Load
OIP3
Gain
P1dB
PAE
(GHz)
Mag
Ang (deg)
Mag
Ang (deg)
(dBm)
(dB)
(dBm)
(%)
0.45
0.47
121.7
0.76
-175.1
41.0
22.0
27.5
39.0
0.9
0.81
-157.5
0.72
-178.1
44.2
21.6
28.3
49.2
1.8
0.82
-110.4
0.62
-135.1
46.5
16.0
28.7
61.3
2
0.85
-106.4
0.64
-127.4
46.2
15.1
29.0
63.0
2.4
0.82
-88.8
0.67
-113.6
45.6
13.0
28.9
55.0
3.5
0.77
-49.6
0.59
-79.5
44.0
8.6
26.9
35.0
Typical Gammas at Optimum P1dB [1]
Optimum P1dB
Freq
Gamma Source
Gamma Load
OIP3
Gain
P1dB
PAE
(GHz)
Mag
Ang (deg)
Mag
Ang (deg)
(dBm)
(dB)
(dBm)
(%)
0.45
0.52
151.2
0.71
-177.5
39.8
23.9
28.5
44.8
0.9
0.79
-160.1
0.67
-158.3
42.8
20.1
30.4
56
1.8
0.83
-112.5
0.72
-131.2
44.2
15.9
30.3
60.3
2
0.82
-102.1
0.69
-117.5
44.8
14.9
30.2
58.6
2.4
0.78
-91.2
0.77
-105.3
44.44
12.5
30.2
54.1
3.5
0.78
-49.7
0.72
-74.6
43.7
8.7
27.3
32
Note:
1. Typical describes additional product performance information that is not covered by the product warranty.
Figure 6. Typical IV curve.
Vds (V)
Ids
(mA)
07
1 1.5
0.5
2.5
2
3.5
3
4.5
4
5 5.5 6 6.5
1000
900
800
700
600
500
400
300
200
100
0
Vgs=0.8V
Vgs=0.7V
Vgs=0.6V
Vgs=0.54V
Vgs=0.5V
Vgs=0.4V
Typical IV Curve
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-50189-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189-BLKG | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-50189-TR1G | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-501P8-BLKG | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET, MO-229 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-50189-TR2 | 功能描述:射频GaAs晶体管 Transistor GaAs Hi gh Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF501P8 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Agilent ATF-501P8 High Linearity Enhancement Mode Pseudomorphic HEMT in 2x2 mm2 LPCC Package |
| ATF-501P8 | 制造商:Avago Technologies 功能描述:MOSFET RF POWERPAK |
| ATF-501P8-BLK | 功能描述:射频GaAs晶体管 Transistor GaAs High Linearity RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-501P8-BLK | 制造商:Avago Technologies 功能描述:RF Bipolar Transistor |
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