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参数资料
| 型号： | ATF-54143-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 10/17页 |
| 文件大小： | 305K |
| 代理商： | ATF-54143-TR1 |
2
ATF-54143 Absolute Maximum Ratings [1]
Absolute
Symbol
Parameter
Units
Maximum
VDS
Drain Source Voltage[2]
V
5
VGS
Gate Source Voltage[2]
V
5 to 1
VGD
Gate Drain Voltage[2]
V
5 to 1
IDS
Drain Current[2]
mA
120
Pdiss
Total Power Dissipation[3]
mW
725
Pin max.
RF Input Power
dBm
20[5]
IGS
Gate Source Current
mA
2[5]
TCH
Channel Temperature
°C
150
TSTG
Storage Temperature
°C
65 to 150
θjc
Thermal Resistance[4]
°C/W
162
Notes:
1. Operation of this device in excess of any one of these parameters
may cause permanent damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate 6.2 mW/°C for TL > 33°C.
4. Thermal resistance measured using 150°C Liquid Crystal Measure
ment method.
5. The device can handle +20 dBm RF Input Power provided IGS is
limited to 2 mA. IGS at P1dB drive level is bias circuit dependent.
See application section for additional information.
Product Consistency Distribution Charts[6, 7]
VDS (V)
Figure 1. Typical I-V Curves.
(VGS= 0.1 V per step)
I DS
(mA)
0.4V
0.5V
0.6V
0.7V
0.3V
0
2
1
4
6
5
3
7
120
100
80
60
40
20
0
OIP3 (dBm)
Figure 2. OIP3 @ 2 GHz, 3 V, 60 mA.
LSL = 33.0, Nominal = 36.575
30
34
32
38
40
36
42
160
120
80
40
0
Cpk = 0.77
Stdev = 1.41
-3 Std
GAIN (dB)
Figure 3. Gain @ 2 GHz, 3 V, 60 mA.
USL = 18.5, LSL = 15, Nominal = 16.6
14
16
15
18
17
19
200
160
120
80
40
0
Cpk = 1.35
Stdev = 0.4
-3 Std
+3 Std
NF (dB)
Figure 4. NF @ 2 GHz, 3 V, 60 mA.
USL = 0.9, Nominal = 0.49
0.25
0.65
0.45
0.85
1.05
160
120
80
40
0
Cpk = 1.67
Stdev = 0.073
+3 Std
Notes:
6. Distribution data sample size is 450 samples taken from 9 different wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a tradeoff between an optimal noise match and a realizeable match
based on production test equipment. Circuit losses have been deembedded from actual measurements.
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| ATF-54143-TR2 | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR1G | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-BLKG | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR2G | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR1 | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-54143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-54143-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-541M4 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-541M4-BLK | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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