参数资料
型号: ATF-54143-TR1
元件分类: 小信号晶体管
英文描述: C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封装: PLASTIC, SC-70, 4 PIN
文件页数: 9/17页
文件大小: 305K
代理商: ATF-54143-TR1
Tape Dimensions and Product Orientation
Description
Symbol
Size(mm)
Size(inches)
Cavity
Length
Ao
2.40 ± 0.10
0.094 ± 0.004
Width
Bo
2.40 ± 0.10
0.094 ± 0.004
Depth
Ko
1.20 ± 0.10
0.047 ± 0.004
Pitch
P
4.00 ± 0.10
0.157 ± 0.004
Bottom Hole Diameter
D1
1.00 + 0.25
0.039 + 0.010
Perforlation
Diameter
D
1.50 + 0.10
0.061 + 0.002
Pitch
PO
4.00 ± 0.10
0.157 ± 0.004
Position
E
1.75 ± 0.10
0.069 ± 0.004
Carrier Tape
Width
W
8.00 + 0.30 0.10
0.315 + 0.012
Thickness
t1
0.254 ± 0.02
0.0100 ± 0.0008
Cover Tape
Width
C
5.40 ± 0.010
0.205 + 0.004
Thickness
Tt
0.062 ± 0.001
0.0025 ± 0.0004
Distance
Cavity to Perforation
F
3.50 ± 0.05
0.138 ± 0.002
(Width Direction)
Cavity to Perforation
P2
2.00 ± 0.05
0.079 ± 0.002
(Length Direction)
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited, in the United States and other countries.
Data subject to change. Copyright 2006 Avago Technologies, Limited. All rights reserved. Obsoletes AV01-0620EN
AV02-0488EN - June 11, 2007
相关PDF资料
PDF描述
ATF-54143-TR2 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR1G C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-BLKG C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR2G C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR1 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相关代理商/技术参数
参数描述
ATF-54143-TR1G 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF-54143-TR2 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-54143-TR2G 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF-541M4 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
ATF-541M4-BLK 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: