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参数资料
型号： ATF-54143-TR1
元件分类： 小信号晶体管
英文描述： C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封装： PLASTIC, SC-70, 4 PIN
文件页数： 14/17页
文件大小： 305K
代理商： ATF-54143-TR1
6
ATF-54143 Typical Scattering Parameters, VDS = 3V, IDS= 40 mA
Freq.
S11
S21
S12
S22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.99
17.6
27.99
25.09
168.5
0.009
80.2
0.59
12.8
34.45
0.5
0.83
76.9
25.47
18.77
130.1
0.036
52.4
0.44
54.6
27.17
0.9
0.72
114
22.52
13.37
108
0.047
40.4
0.33
78.7
24.54
1.0
0.70
120.6
21.86
12.39
103.9
0.049
38.7
0.31
83.2
24.03
1.5
0.65
146.5
19.09
9.01
87.4
0.057
33.3
0.24
99.5
21.99
1.9
0.63
162.1
17.38
7.40
76.6
0.063
30.4
0.20
108.6
20.70
2.0
0.62
165.6
17.00
7.08
74.2
0.065
29.8
0.19
110.9
20.37
2.5
0.61
178.5
15.33
5.84
62.6
0.072
26.6
0.15
122.6
19.09
3.0
0.61
164.2
13.91
4.96
51.5
0.080
22.9
0.12
137.5
17.92
4.0
0.63
138.4
11.59
3.80
31
0.094
14
0.10
176.5
15.33
5.0
0.66
116.5
9.65
3.04
11.6
0.106
4.2
0.14
138.4
12.99
6.0
0.69
97.9
8.01
2.51
6.7
0.118
6.1
0.17
117.6
11.50
7.0
0.71
80.8
6.64
2.15
24.5
0.128
17.6
0.20
98.6
10.24
8.0
0.72
62.6
5.38
1.86
42.5
0.134
29.3
0.22
73.4
8.83
9.0
0.76
45.2
4.20
1.62
60.8
0.145
40.6
0.27
52.8
8.17
10.0
0.83
28.2
2.84
1.39
79.8
0.150
56.1
0.37
38.3
8.57
11.0
0.85
13.9
1.42
1.18
96.9
0.149
69.3
0.45
25.8
7.47
12.0
0.88
0.5
0.23
1.03
112.4
0.150
81.6
0.51
12.7
7.50
13.0
0.89
15.1
0.86
0.91
129.7
0.149
95.7
0.54
4.1
6.60
14.0
0.87
31.6
2.18
0.78
148
0.143
110.3
0.61
20.1
4.57
15.0
0.88
46.1
3.85
0.64
164.8
0.132
124
0.65
34.9
3.47
16.0
0.87
54.8
5.61
0.52
178.4
0.121
134.6
0.70
45.6
2.04
17.0
0.87
62.8
7.09
0.44
170.1
0.116
144.1
0.73
55.9
1.05
18.0
0.92
73.6
8.34
0.38
156.1
0.109
157.4
0.76
68.7
1.90
Freq
Fmin
Γopt
Rn/50
Ga
GHz
dB
Mag.
Ang.
dB
0.5
0.17
0.34
34.80
0.04
27.83
0.9
0.22
0.32
53.00
0.04
23.57
1.0
0.24
0.32
60.50
0.04
22.93
1.9
0.42
0.29
108.10
0.04
18.35
2.0
0.45
0.29
111.10
0.04
17.91
2.4
0.51
0.30
136.00
0.04
16.39
3.0
0.59
0.32
169.90
0.05
15.40
3.9
0.69
0.34
151.60
0.05
13.26
5.0
0.90
0.45
119.50
0.09
11.89
5.8
1.14
0.50
101.60
0.16
10.95
6.0
1.17
0.52
99.60
0.18
10.64
7.0
1.24
0.58
79.50
0.33
9.61
8.0
1.57
0.60
57.90
0.56
8.36
9.0
1.64
0.69
39.70
0.87
7.77
10.0
1.8
0.80
22.20
1.34
7.68
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true
Fmin is calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes con
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, VDS = 3V, IDS= 40 mA
Figure 19. MSG/MAG and |S21|2 vs.
Frequency at 3V, 40 mA.
MAG
S21
FREQUENCY (GHz)
MSG/MAG
and
S
21
(dB)
0
20
10
5
15
40
35
30
25
20
15
10
5
0
-5
10
-15
MSG
相关PDF资料
PDF描述
ATF-54143-TR2 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR1G C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-BLKG C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR2G C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-54143-TR1 C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相关代理商/技术参数
参数描述
ATF-54143-TR1G 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF-54143-TR2 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-54143-TR2G 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF-541M4 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
ATF-541M4-BLK 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
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