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参数资料
| 型号： | ATF-54143-TR1 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 12/17页 |
| 文件大小： | 305K |
| 代理商： | ATF-54143-TR1 |
4
ATF-54143 Typical Performance Curves
Figure 8. Gain vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
Figure 10. OIP3 vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
Figure 12. P1dB vs. Idq and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
Figure 9. Gain vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
3V
4V
Ids (mA)
GAIN
(dB)
0
100
40
20
80
60
19
18
17
16
15
14
13
12
3V
4V
Ids (mA)
OIP3
(dBm)
0
100
40
20
80
60
42
37
32
27
22
17
12
3V
4V
Idq (mA)[1]
P1dB
(dBm)
0
100
40
20
80
60
24
22
20
18
16
14
12
3V
4V
Ids (mA)
GAIN
(dB)
0
100
40
20
80
60
25
24
23
22
21
20
19
18
Figure 11. OIP3 vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
3V
4V
Ids (mA)
OIP3
(dBm)
0
100
40
20
80
60
40
35
30
25
20
15
Figure 13. P1dB vs. Idq and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
Figure 14. Gain vs. Frequency and Temp
Tuned for Max OIP3 and Fmin at 3V, 60 mA.
3V
4V
Idq (mA)[1]
P1dB
(dBm)
0
100
40
20
80
60
23
22
21
20
19
18
17
16
15
25 C
-40 C
85 C
FREQUENCY (GHz)
GAIN
(dB)
0
6
2
1
4
5
3
35
30
25
20
15
10
5
Figure 7. Fmin vs. Ids and Vds Tuned for
Max OIP3 and Min NF at 900 MHz.
3V
4V
Ids (mA)
Fmin
(dB)
0
100
40
20
80
60
0.6
0.5
0.4
0.3
0.2
0.1
0
Figure 6. Fmin vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
3V
4V
Ids (mA)
Fmin
(dB)
0
100
40
20
80
60
0.7
0.6
0.5
0.4
0.3
0.2
Notes:
1. Idq represents the quiescent drain current without RF drive applied. Under low values of Ids, the application of RF drive will cause Id to increase
substantially as P1dB is approached.
2. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based
on a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true
Fmin is calculated. Refer to the noise parameter application section for more information.
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| ATF-54143-TR2 | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR1G | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-BLKG | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR2G | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-54143-TR1 | C BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-54143-TR1G | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-54143-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-54143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-541M4 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-541M4-BLK | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
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