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参数资料
| 型号： | ATF-55143-TR1G |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件页数： | 16/21页 |
| 文件大小： | 338K |
| 代理商： | ATF-55143-TR1G |
4
ATF-55143 Typical Performance Curves
Figure 6. Gain vs. Bias over Frequency.[1]
FREQUENCY (GHz)
GAIN
(dB)
0
6
2
1
4
5
3
30
25
20
15
10
5
2V, 10 mA
2.7V, 10 mA
Figure 8. OIP3 vs. Bias over Frequency.[1]
FREQUENCY (GHz)
OIP3
(dBm)
0
6
2
1
4
5
3
2V, 10 mA
2.7V, 10 mA
27
25
23
21
19
17
15
Figure 9. IIP3 vs. Bias over Frequency.[1]
FREQUENCY (GHz)
IIP3
(dBm)
0
6
2
1
4
5
3
2V, 10 mA
2.7V, 10 mA
15
10
5
0
-5
Figure 10. P1dB vs. Bias over Frequency.[1,2]
FREQUENCY (GHz)
P1dB
(dBm)
0
6
2
1
4
5
3
2V, 10 mA
2.7V, 10 mA
16
14
12
10
8
Figure 11. Gain vs. Ids and Vds at 2 GHz.[1]
2V
2.7V
3V
Ids (mA)
GAIN
(dB)
0
35
10
5
20
25
30
15
21
20
19
18
17
16
15
Figure 13. OIP3 vs. Ids and Vds at 2 GHz.[1]
Ids (mA)
OIP3
(dBm)
0
35
33
31
29
27
25
23
21
19
2V
2.7V
3V
10
5
20
25
30
15
Figure 14. IIP3 vs. Ids and Vds at 2 GHz.[1]
Ids (mA)
IIP3
(dBm)
0
35
16
14
12
10
8
6
4
2
0
2V
2.7V
3V
10
5
20
25
30
15
Figure 7. Fmin vs. Frequency and Bias.
FREQUENCY (GHz)
Fmin
(dB)
0
6
2
1
4
5
3
2V, 10 mA
2.7V, 10 mA
1.2
1.0
0.8
0.6
0.4
0.2
0
Figure 12. Fmin vs. Ids and Vds at 2 GHz.
Ids (mA)
Fmin
(dB)
0
35
0.60
0.55
0.50
0.45
0.40
0.35
0.30
0.25
0.20
2V
2.7V
3V
10
5
20
25
30
15
Notes:
1. Measurements at 2 GHz were made on a fixed tuned production test board that was tuned for optimal OIP3 match with reasonable noise figure
at 2.7 V, 10 mA bias. This circuit represents a tradeoff between optimal noise match, maximum OIP3 match and a realizable match based on
production test board requirements. Measurements taken above and below 2 GHz were made using a double stub tuner at the input tuned for
low noise and a double stub tuner at the output tuned for maximum OIP3. Circuit losses have been deembedded from actual measurements.
2. P1dB measurements are performed with passive biasing. Quiescent drain current, I
dsq, is set with zero RF drive applied. As P1dB is approached,
the drain current may increase or decrease depending on frequency and dc bias point. At lower values of I
dsq, the device is running close to class
B as power output approaches P1dB. This results in higher P1dB and higher PAE (power added efficiency) when compared to a device that is
driven by a constant current source as is typically done with active biasing. As an example, at a V
DS = 2.7V and Idsq = 5 mA, Id increases to 15 mA
as a P1dB of +14.5 dBm is approached.
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-55143-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR2G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-55143-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-551M4 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-551M4-BLK | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-551M4-BLK | 制造商:Avago Technologies 功能描述:Transistor |
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