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参数资料
型号： ATF-55143-TR1G
元件分类： 小信号晶体管
英文描述： C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封装： LEAD FREE, PLASTIC, SC-70, 4 PIN
文件页数： 20/21页
文件大小： 338K
代理商： ATF-55143-TR1G
8
ATF-55143 Typical Scattering Parameters, V
DS = 2V, IDS = 15 mA
Freq.
S
11
S
21
S
12
S
22
MSG/MAG
GHz
Mag.
Ang.
dB
Mag.
Ang.
Mag.
Ang.
Mag.
Ang.
dB
0.1
0.997
7.1
22.33
13.074
174.4
0.006
85.7
0.752
4.6
33.38
0.5
0.953
34.5
21.82
12.333
153.0
0.027
69.4
0.712
22.1
26.60
0.9
0.873
58.8
20.86
11.042
134.4
0.044
56.3
0.654
36.7
24.00
1.0
0.856
64.6
20.58
10.693
130.3
0.047
53.3
0.636
39.6
23.57
1.5
0.759
89.3
19.14
9.059
112.2
0.060
41.6
0.560
51.8
21.79
1.9
0.695
106.2
18.06
7.998
100.0
0.068
34.4
0.509
59.0
20.70
2.0
0.681
110.2
17.8
7.762
97.2
0.070
32.8
0.498
60.5
20.45
2.5
0.621
129.3
16.62
6.773
83.9
0.076
25.6
0.443
67.5
19.50
3.0
0.578
147.4
15.54
5.985
71.8
0.082
19.4
0.390
73.6
18.63
4.0
0.536
177.3
13.71
4.850
49.4
0.091
7.9
0.295
87.3
17.27
5.0
0.541
145.1
12.09
4.020
28.4
0.096
3.0
0.225
104.3
16.22
6.0
0.554
119.1
10.59
3.384
9.0
0.101
12.7
0.183
120.8
13.89
7.0
0.574
97.0
9.3
2.917
9.1
0.105
23.0
0.150
138.4
12.18
8.0
0.594
75.5
8.13
2.549
27.0
0.106
33.1
0.101
149.7
10.73
9.0
0.63
55.9
7.12
2.271
44.6
0.113
40.4
0.047
175.2
9.87
10.0
0.703
37.3
6.14
2.028
63.5
0.121
53.2
0.078
82.0
9.69
11.0
0.757
21.1
4.92
1.762
81.7
0.123
65.3
0.162
51.1
9.12
12.0
0.793
7.1
3.79
1.547
98.5
0.125
76.9
0.231
31.3
8.52
13.0
0.818
8.2
2.77
1.376
115.9
0.125
89.5
0.275
12.8
7.92
14.0
0.841
23.8
1.76
1.225
134.3
0.125
102.7
0.339
5.5
7.38
15.0
0.863
38.1
0.32
1.038
152.5
0.118
116.3
0.438
21.0
6.54
16.0
0.856
51.2
1.29
0.862
168.8
0.111
128.0
0.524
32.0
4.99
17.0
0.871
60.2
2.66
0.736
177.0
0.109
138.6
0.586
44.4
4.38
18.0
0.913
70.4
3.8
0.646
161.7
0.105
151.9
0.636
58.1
5.20
Freq
F
min
Γ
opt
Γ
opt
R
n/50
G
a
GHz
dB
Mag.
Ang.
dB
0.5
0.21
0.627
18.7
0.1
25.41
0.9
0.25
0.56
23.6
0.1
23.47
1.0
0.26
0.53
27.3
0.1
23.02
1.9
0.4
0.51
49.7
0.09
19.44
2.0
0.41
0.5
52.6
0.09
19.09
2.4
0.48
0.41
62.3
0.09
17.81
3.0
0.57
0.35
80.4
0.08
16.17
3.9
0.7
0.22
118.4
0.06
14.25
5.0
0.86
0.2
176.5
0.06
12.6
5.8
0.99
0.23
140.5
0.08
11.77
6.0
1.03
0.23
134.6
0.08
11.6
7.0
1.16
0.29
99.3
0.14
10.86
8.0
1.35
0.35
69.3
0.25
10.22
9.0
1.49
0.43
47.9
0.39
9.48
10.0
1.62
0.54
30.8
0.57
8.47
Notes:
1. F
min values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on
a set of 16 noise figure measurements made at 16 different impedances using an ATN NP5 test system. From these measurements a true F
min is
calculated. Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the effect of four plated through via holes con
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, V
DS = 2V, IDS = 15 mA
Figure 27. MSG/MAG and |S21|2 vs.
Frequency at 2V, 15 mA.
MSG
FREQUENCY (GHz)
MSG/MAG
and
|S
21
|
2 (dB)
0
20
10
5
15
40
35
30
25
20
15
10
5
0
-5
-10
|S21|
2
MAG
相关PDF资料
PDF描述
ATF-55143-TR2 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-55143-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-55143-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-TR2G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-BLK X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相关代理商/技术参数
参数描述
ATF-55143-TR2 制造商:AGILENT 制造商全称:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-55143-TR2G 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF-551M4 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
ATF-551M4-BLK 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF-551M4-BLK 制造商:Avago Technologies 功能描述:Transistor
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