- 您现在的位置：买卖IC网 > PDF目录42904 > ATF-55143-TR1G C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET PDF资料下载
参数资料
| 型号： | ATF-55143-TR1G |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | LEAD FREE, PLASTIC, SC-70, 4 PIN |
| 文件页数： | 9/21页 |
| 文件大小： | 338K |
| 代理商： | ATF-55143-TR1G |
17
Figure 35. Adding Vias to the ATF-55143 Non-Linear Model for Comparison to Measured S and Noise Parameters.
Designing with S and Noise Parameters and the Non-Lin-
ear Model
The nonlinear model describing the ATF55143 in
cludes both the die and associated package model.
The package model includes the effect of the pins but
does not include the effect of the additional source
inductance associated with grounding the source leads
through the printed circuit board. The device S and
Noise Parameters do include the effect of 0.020 inch
thickness printed circuit board vias. When comparing
simulation results between the measured S parameters
and the simulated nonlinear model, be sure to include
the effect of the printed circuit board to get an accurate
comparison. This is shown schematically in Figure 35.
For Further Information
The information presented here is an introduction to the
use of the ATF55143 enhancement mode PHEMT. More
detailed application circuit information is available from
Avago Technologies. Consult the web page or your local
Avago Technologies sales representative.
DRAIN
VIA2
V1
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
VIA2
V2
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
VIA2
V4
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
SOURCE
GATE
SOURCE
ATF-55143
MSUB
MSub1
H=25.0 mil
Er=9.6
Mur=1
Cond=1.0E+50
Hu=3.9e+034 mil
T=0.15 mil
TanD=0
Rough=0 mil
MSub
VIA2
V3
D=20.0 mil
H=25.0 mil
T=0.15 mil
Rho=1.0
W=40.0 mil
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-55143-TR2 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-55143-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-TR2G | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-551M4-BLK | X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-55143-TR2 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package |
| ATF-55143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-551M4 | 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package |
| ATF-551M4-BLK | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF-551M4-BLK | 制造商:Avago Technologies 功能描述:Transistor |
发布紧急采购，3分钟左右您将得到回复。