参数资料
型号: ATF-55143-TR1G
元件分类: 小信号晶体管
英文描述: C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
封装: LEAD FREE, PLASTIC, SC-70, 4 PIN
文件页数: 8/21页
文件大小: 338K
代理商: ATF-55143-TR1G
16
ATF-55143 Die Model
NFET=yes
PFET=no
Vto=0.3
Beta=0.444
Lambda=72e-3
Alpha=13
Tau=
Tnom=16.85
Idstc=
Ucrit=-0.72
Vgexp=1.91
Gamds=1e-4
Vtotc=
Betatce=
Rgs=0.5 Ohm
Rf=
Gscap=2
Cgs=0.6193 pF
Cgd=0.1435 pF
Gdcap=2
Fc=0.65
Rgd=0.5 Ohm
Rd=2.025 Ohm
Rg=1.7 Ohm
Rs=0.675 Ohm
Ld=
Lg=0.094 nH
Ls=
Cds=0.100 pF
Rc=390 Ohm
Crf=0.1 F
Gsfwd=
Gsrev=
Gdfwd=
Gdrev=
R1=
R2=
Vbi=0.95
Vbr=
Vjr=
Is=
Ir=
Imax=
Xti=
Eg=
N=
Fnc=1 MHz
R=0.08
P=0.2
C=0.1
Taumdl=no
wVgfwd=
wBvgs=
wBvgd=
wBvds=
wldsmax=
wPmax=
AllParams=
Advanced_Curtice2_Model
MESFETM1
GATE
SOURCE
INSIDE Package
Port
G
Num=1
C
C1
C=0.143 pF
Port
S1
Num=2
SOURCE
DRAIN
Port
S2
Num=4
Port
D
Num=3
L
L6
L=0.205 nH
R=0.001
C
C2
C=0.115 pF
L
L7
L=0.778 nH
R=0.001
MSub
TLINP
TL4
Z=Z1 Ohm
L=15 mil
K=1
TLINP
TL10
Z=Z1 Ohm
L=15 mil
K=1
TLINP
TL3
Z=Z2 Ohm
L=25 mil
K=K
TLINP
TL9
Z=Z2 Ohm
L=10.0 mil
K=K
VAR
VAR1
K=5
Z2=85
Z1=30
Var
Egn
TLINP
TL1
Z=Z2/2 Ohm
L=20 0 mil
K=K
TLINP
TL2
Z=Z2/2 Ohm
L=20 0 mil
K=K
TLINP
TL8
Z=Z1 Ohm
L=15.0 mil
K=1
TLINP
TL7
Z=Z2/2 Ohm
L=5.0 mil
K=K
TLINP
TL5
Z=Z2 Ohm
L=26.0 mil
K=K
TLINP
TL6
Z=Z1 Ohm
L=15.0 mil
K=1
L
L1
L=0.621 nH
R=0.001
L
L4
L=0.238 nH
R=0.001
GaAsFET
FET1
Mode1=MESFETM1
Mode=Nonlinear
MSUB
MSub1
H=25.0 mil
Er=9.6
Mur=1
Cond=1.0E+50
Hu=3.9e+034 mil
T=0.15 mil
TanD=0
Rough=0 mil
ATF-55143 ADS Package Model
相关PDF资料
PDF描述
ATF-55143-TR2 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-55143-BLK C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-55143-TR1 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-TR2G X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-551M4-BLK X BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
相关代理商/技术参数
参数描述
ATF-55143-TR2 制造商:AGILENT 制造商全称:AGILENT 功能描述:Agilent ATF-55143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package
ATF-55143-TR2G 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF-551M4 制造商:AGILENT 制造商全称:AGILENT 功能描述:Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package
ATF-551M4-BLK 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
ATF-551M4-BLK 制造商:Avago Technologies 功能描述:Transistor