- 您现在的位置：买卖IC网 > PDF目录48377 > ATF-58143-TR2 C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET PDF资料下载
参数资料
| 型号： | ATF-58143-TR2 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| 封装： | PLASTIC, SC-70, 4 PIN |
| 文件页数： | 4/10页 |
| 文件大小： | 179K |
| 代理商： | ATF-58143-TR2 |
ATF-58143 Electrical Specifications
T
A = 25°C, RF parameters measured in a test circuit for a typical device
Symbol
Parameter and Test Condition
Units
Min.
Typ.[2]
Max.
Vgs
Operational Gate Voltage
Vds = 3V, Ids = 30 mA
V
0.4
0.51
0.75
Vth
Threshold Voltage
Vds = 3V, Ids = 4 mA
V
0.18
0.38
0.52
Idss
Saturated Drain Current
Vds = 3V, Vgs = 0V
A
—
1
5
Gm
Transconductance
Vds = 3V,
mmho
230
410
560
gm =
Idss/Vgs;
Vgs = 0.75 –0.7 = 0.05V
Igss
Gate Leakage Current
Vgd = Vgs = 3V
A
—
200
NF
Noise Figure[1]
f = 2 GHz
Vds = 3V, Ids = 30 mA
dB
—
0.5
0.9
f = 900 MHz
Vds = 3V, Ids = 30 mA
dB
—
0.3
—
f = 2 GHz
Vds = 4V, Ids = 30 mA
dB
—
0.5
—
f = 900 MHz
Vds = 4V, Ids = 30 mA
dB
—
0.3
—
Ga
Associated Gain[1]
f = 2 GHz
Vds = 3V, Ids = 30 mA
dB
15
16.5
18.5
f = 900 MHz
Vds = 3V, Ids = 30 mA
dB
—
23.1
—
f = 2 GHz
Vds = 4V, Ids = 30 mA
dB
—
17.7
—
f = 900 MHz
Vds = 4V, Ids = 30 mA
dB
—
22.5
—
OIP3
Output 3rd Order
f = 2 GHz
Vds = 3V, Ids = 30 mA
dBm
29
30.5
—
Intercept Point[1]
f = 900 MHz
Vds = 3V, Ids = 30 mA
dBm
—
28.6
—
f = 2 GHz
Vds = 4V, Ids = 30 mA
dBm
—
31.5
—
f = 900 MHz
Vds = 4V, Ids = 30 mA
dBm
—
31.0
—
P1dB
1dB Compressed
f = 2 GHz
Vds = 3V, Ids = 30 mA
dBm
—
19
—
Output Power[1]
f = 900 MHz
Vds = 3V, Ids = 30 mA
dBm
—
18
—
f = 2 GHz
Vds = 4V, Ids = 30 mA
dBm
—
21
—
f = 900 MHz
Vds = 4V, Ids = 30 mA
dBm
—
19
—
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values determined from a sample size of 500 parts from 3 wafers.
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB and OIP3 measurements. This circuit represents a
trade-off between an optimal noise match and associated impedance matching circuit losses.
RFin
RFout
output
matching
0.7 dB loss
input
matching
0.6 dB loss
28.2 + j9.4
51 – j3.3
相关PDF资料 |
PDF描述 |
|---|---|
| ATF-58143-TR1 | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATF-58143-BLK | C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| ATP202 | 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP202 | 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| ATP207 | 65 A, 40 V, 0.0091 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATF-58143-TR2G | 功能描述:射频GaAs晶体管 Transistor GaAs Single Voltage RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| ATF6 | 功能描述:TERM BLOCK DIN RAIL 8MM GRAY RoHS:是 类别:连接器，互连式 >> 接线座 - Din 轨道，通道 系列:ATF 标准包装:1 系列:CLIPLINE UK 类型:断连 断开类型:保险丝，杆 位置数:3 级别数目:1 端子 - 宽度:18.0mm 端接类型:螺钉 电流 - IEC:32A 电压 - IEC:690V 电流 - UL:30A 电压 - UL:600V 线规或范围 - AWG:3-18 AWG 线规或范围 - mm²:1.5-25mm² 特点:- 颜色:黑 保险丝类型:小型，10.3mm x 38mm 材料 - 绝缘体:聚酰胺（PA），尼龙 材料可燃性额定值:UL94 V-0 剥线长度:12mm 其它名称:UK 10.3-HESI N 3POLUK10.3-HESIN3POL |
| ATF6BK | 功能描述:TERM BLOCK DIN RAIL 8MM BLACK RoHS:是 类别:连接器，互连式 >> 接线座 - Din 轨道，通道 系列:ATF 标准包装:1 系列:CLIPLINE UK 类型:断连 断开类型:保险丝，杆 位置数:3 级别数目:1 端子 - 宽度:18.0mm 端接类型:螺钉 电流 - IEC:32A 电压 - IEC:690V 电流 - UL:30A 电压 - UL:600V 线规或范围 - AWG:3-18 AWG 线规或范围 - mm²:1.5-25mm² 特点:- 颜色:黑 保险丝类型:小型，10.3mm x 38mm 材料 - 绝缘体:聚酰胺（PA），尼龙 材料可燃性额定值:UL94 V-0 剥线长度:12mm 其它名称:UK 10.3-HESI N 3POLUK10.3-HESIN3POL |
| ATF6BU | 功能描述:TERM BLOCK DIN RAIL 8MM BLUE RoHS:是 类别:连接器，互连式 >> 接线座 - Din 轨道，通道 系列:ATF 标准包装:1 系列:CLIPLINE UK 类型:断连 断开类型:保险丝，杆 位置数:3 级别数目:1 端子 - 宽度:18.0mm 端接类型:螺钉 电流 - IEC:32A 电压 - IEC:690V 电流 - UL:30A 电压 - UL:600V 线规或范围 - AWG:3-18 AWG 线规或范围 - mm²:1.5-25mm² 特点:- 颜色:黑 保险丝类型:小型，10.3mm x 38mm 材料 - 绝缘体:聚酰胺（PA），尼龙 材料可燃性额定值:UL94 V-0 剥线长度:12mm 其它名称:UK 10.3-HESI N 3POLUK10.3-HESIN3POL |
| ATF6CL110 | 功能描述:SHORT LINK COMB INSUL DIN 10POLE RoHS:是 类别:连接器，互连式 >> 接线座 - 配件 - 跳线 系列:ATF 标准包装:10 系列:- 类型:接线板 － 交叉连接 位置数:4 样式:- 适用于相关产品:接线座 其它名称:FBSTB 4-6 |
发布紧急采购，3分钟左右您将得到回复。