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参数资料
| 型号： | ATP107 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 40 V, 0.017 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE, ATPAK-3 |
| 文件页数： | 1/4页 |
| 文件大小： | 469K |
| 代理商： | ATP107 |
ATP107
No. A1603-1/4
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer
's
products or equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Features
Low ON-resistance.
Large current.
Slim package.
4.5V drive.
Halogen free compliance.
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--40
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--50
A
Drain Current (PW≤10μs)
IDP
PW≤10μs, duty cycle≤1%
--150
A
Allowable Power Dissipation
PD
Tc=25°C50
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
80
mJ
Avalanche Current *2
IAV
--25
A
Note :
*1 VDD=--10V, L=200μH, IAV=--25A
*2 L≤200μH, Single pulse
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--40
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--40V, VGS=0V
--1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Marking : ATP107
Continued on next page.
Ordering number : ENA1603
N1109PA TK IM TC-00002146
SANYO Semiconductors
DATA SHEET
ATP107
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
www.semiconductor-sanyo.com/network
http://semicon.sanyo.com/en/network
相关PDF资料 |
PDF描述 |
|---|---|
| ATP112 | 25 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP112TL | 25 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP113 | 35 A, 60 V, 0.0295 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP113TL | 35 A, 60 V, 0.0295 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP212 | 35 A, 60 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATP107_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP107-TL-H | 功能描述:MOSFET P-CH 40V 50A ATPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| ATP108 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| ATP108_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP108-TL-H | 功能描述:MOSFET P-CH 40V 70A ATPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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