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参数资料
| 型号： | ATP107 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | JFETs |
| 英文描述： | 50 A, 40 V, 0.017 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封装： | HALOGEN FREE, ATPAK-3 |
| 文件页数： | 4/4页 |
| 文件大小： | 469K |
| 代理商： | ATP107 |
ATP107
No. A1603-4/4
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
PS
This catalog provides information as of November, 2009. Specications and information herein are subject
to change without notice.
Note on usage : Since the ATP107 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
VGS -- Qg
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
--
V
EAS -- Ta
A
valanche
Ener
gy
derating
factor
--
%
Ambient Temperature, Ta --
°C
0
25
50
75
100
125
150
100
80
60
20
40
120
175
IT15179
A S O
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
-
A
PD -- Tc
Allowable
Power
Dissipation,
P
D
--
W
Case Temperature, Tc --
°C
IT15177
IT15176
0
5
10
15
25
20
50
30
35
40
45
0
--2
--4
--6
--1
--3
--5
--8
--7
--9
--10
IT15178
--0.1
--1.0
2
3
5
7
2
3
5
7
2
3
5
3
2
7
--10
--0.1
IDP= --150A
ID= --50A
100
μs
1ms
10ms
100ms
DC
operation
Operation in
this area is
limited by RDS(on).
--1.0
23
5 7
2
--10
35 7
2
3
7
5
10
μs
--100
0
20
40
60
80
100
140
120
50
40
20
30
10
60
160
VDS= --20V
ID= --50A
Tc=25
°C
Single pulse
PW
≤10μs
相关PDF资料 |
PDF描述 |
|---|---|
| ATP112 | 25 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP112TL | 25 A, 60 V, 0.043 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP113 | 35 A, 60 V, 0.0295 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP113TL | 35 A, 60 V, 0.0295 ohm, P-CHANNEL, Si, POWER, MOSFET |
| ATP212 | 35 A, 60 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| ATP107_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP107-TL-H | 功能描述:MOSFET P-CH 40V 50A ATPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| ATP108 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| ATP108_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| ATP108-TL-H | 功能描述:MOSFET P-CH 40V 70A ATPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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