参数资料
型号: ATTINY15L-1PU
厂商: Atmel
文件页数: 55/85页
文件大小: 0K
描述: IC MCU AVR 1K FLASH 1.6MHZ 8-DIP
标准包装: 50
系列: AVR® ATtiny
核心处理器: AVR
芯体尺寸: 8-位
速度: 1.6MHz
外围设备: 欠压检测/复位,POR,PWM,WDT
输入/输出数: 6
程序存储器容量: 1KB(512 x 16)
程序存储器类型: 闪存
EEPROM 大小: 64 x 8
电压 - 电源 (Vcc/Vdd): 2.7 V ~ 5.5 V
数据转换器: A/D 4x10b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 8-DIP(0.300",7.62mm)
包装: 管件
59
ATtiny15L
1187H–AVR–09/07
High-voltage Serial
Programming
Characteristics
Figure 32. High-voltage Serial Programming Timing
Low-voltage Serial
Downloading
Both the program and data memory arrays can be programmed using the SPI bus while
RESET is pulled to GND. The serial interface consists of pins SCK, MOSI (input) and
MISO (output). See Figure 33. After RESET is set low, the Programming Enable instruc-
tion needs to be executed first before program/erase instructions can be executed.
Figure 33. Serial Programming and Verify
For the EEPROM, an auto-erase cycle is provided within the self-timed write instruction
and there is no need to first execute the Chip Erase instruction. The Chip Erase instruc-
tion turns the content of every memory location in both the program and EEPROM
arrays into $FF.
The program and EEPROM memory arrays have separate address spaces: $0000 to
$01FF for Program memory and $000 to $03F for EEPROM memory.
Table 26. High-voltage Serial Programming Characteristics, T
A = 25°C ± 10%,
V
CC = 5.0V ± 10% (unless otherwise noted)
Symbol
Parameter
Min
Typ
Max
Units
tSHSL
SCI (PB3) Pulse Width High
25.0
ns
tSLSH
SCI (PB3) Pulse Width Low
25.0
ns
tIVSH
SDI (PB0), SII (PB1) Valid to SCI (PB3) High (8th
edge)
50.0
ns
tSHIX
SDI (PB0), SII (PB1) Hold after SCI (PB3) High (8th
edge)
50.0
ns
tSHOV
SCI (PB3) High (9th edge) to SDO (PB2) Valid
10.0
16.0
32.0
ns
SDI (PB0), SII (PB1)
SDO (PB2)
SCI (PB3)
t
IVSH
t
SHSL
t
SLSH
t
SHIX
t
SHOV
Internal CK
1
2
7
8
9
10
15
16
VALID
PB5 (RESET)
GND
VCC
PB2
PB1
PB0
SCK
MISO
MOSI
2.7 - 5.5V
ATtiny15/L
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